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1SMB5918BT3

Onsemi

1SMB5918BT3 by Onsemi

1SMB5918BT3 by Onsemi is a Zener diode with a nominal reference voltage of 5.1V and max operating temperature of 175°C. It has a working test current of 73.5mA, making it suitable for applications requiring precise voltage regulation in compact electronic devices. With surface mount capability and small outline package style, it offers efficient performance in various circuit designs.

Median Price

$0.770

Lifecycle Status

Suppliers In-Stock

29

In-Stock Inventory

1k+

Distributors (In-Stock)

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Mobius Materials

USA . 2,897 parts In-Stock

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$0.670

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$0.530

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Component Electronics Inc.

Canada . 10 parts In-Stock

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$0.770

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$0.580

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$0.500

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10

$0.770

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American Microsemiconductor Inc.

USA . 232 parts In-Stock

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$0.810

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Chip Stock

USA . 273,000 parts In-Stock

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VNN

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Sunrise Surplus Inc.

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Manoshevitz Elec. Sales

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A2Z Electronics, Inc.

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Semtec, LLC

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Bristol Electronics

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Connector Distribution Corp

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Right Parts Inc.

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MISTER SPROCKETS

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ACDS - Activité Composants Distribution Service

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QIE Inc.

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Digiode

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Vyrian

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Sea View Technologies

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ComSIT Distribution GmbH

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ComSIT USA

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First Choice Components Inc.

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Prism Electronics

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Nova Conductors

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Semi Source

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Legend Electronics Inc.

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Beltway Electronics Company

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NexGen Digital

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Corohmni

South Africa . 53 parts In-Stock

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Aztec Data Supply Inc.

USA . 1,710 parts In-Stock

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$0.165

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Ampacity Inc.

Singapore . 1,366 parts In-Stock

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AZTECH Wire

Italy . 937 parts In-Stock

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Lixinc

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Microchip USA

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SupplyDigital Components

Austria . 5,485 parts In-Stock

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TANS Electronics

Latvia . 4,750 parts In-Stock

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Perfect Parts

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Continental Prestige Electronics

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Kulean Microsystems

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Speed Components Ltd (Excess)

Israel . 2,500 parts In-Stock

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Problanco Electronics

Mexico . 2,146 parts In-Stock

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Corphita

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UHIMA Technologies

Türkiye . 15 parts In-Stock

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Overview

Elevate your electronic projects to the next level with the 1SMB5918BT3 by Onsemi. Crafted with precision and expertise, this Zener diode offers unparalleled quality and reliability. Whether you're a DIY enthusiast or a professional in need of a reliable component, this product is designed to exceed your expectations. From voltage regulation to signal conditioning, the applications of this category are endless. Trust in Onsemi's reputation for excellence and choose the 1SMB5918BT3 for all your electronic needs. Unlock the potential of your projects with this versatile and high-performance component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection, making it a reliable choice for various applications.

Config: SINGLE

The single configuration simplifies the setup process and reduces the risk of errors during installation.

Working Test Current: 73.5 mA

The high working test current ensures optimal performance and reliability under different operating conditions.

Surface Mount: YES

The surface mount feature allows for easy installation and saves space in compact designs.

Package Shape: RECTANGULAR

The rectangular shape offers versatility in mounting options and compatibility with standard board layouts.

No. of Terminals: 2

With two terminals, the diode can easily be connected in circuits for efficient operation.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and enables integration into tight spaces.

Maximum Voltage Tolerance: 5 %

The tight voltage tolerance ensures consistent and accurate performance in voltage regulation.

Maximum Operating Temperature: 175 °C

With a high operating temperature range, the diode can withstand harsh environmental conditions.

Maximum Dynamic Impedance: 4 ohm

The low dynamic impedance allows for efficient signal processing and reliable voltage regulation.

Terminal Finish: Tin/Lead (Sn/Pb)

The tin/lead terminal finish provides excellent conductivity and solderability for secure connections.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit configurations and ease of connection.

Maximum Power Dissipation: 0.55 W

The high power dissipation capability ensures the diode can handle power surges and fluctuations.

Maximum Time At Peak Reflow Temperature (s): 30

The short time at peak reflow temperature minimizes the risk of overheating and damage during soldering.

Peak Reflow Temperature °C: 235

The high peak reflow temperature allows for reliable solder joints and long-term performance.

Diode Type: ZENER DIODE

The Zener diode type is ideal for voltage regulation and protection in electronic circuits.

Nominal Reference Voltage: 5.1 V

The specific nominal reference voltage provides accurate voltage regulation for precise circuit operation.

Technology: ZENER

The Zener technology ensures stable voltage regulation and protection against voltage spikes in various applications.

Terminal Form: C BEND

The C bend terminal form offers secure mounting and ease of soldering for reliable connections.

Polarity: UNIDIRECTIONAL

The unidirectional polarity ensures consistent voltage regulation in one direction, enhancing circuit efficiency.

Diode Element Material: SILICON

The silicon diode element material offers high efficiency and reliability in voltage regulation and protection.

Technical Specifications

Zener Diodes 1SMB5918BT3 attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

4 ohm

JEDEC-95 Code:

DO-214AA

JESD-30 Code:

R-PDSO-C2

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

.55 W

Qualification:

Not Qualified

Nominal Reference Voltage:

5.1 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

YES

Technology:

ZENER

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Maximum Voltage Tolerance:

5 %

Working Test Current:

73.5 mA

Trade Compliance

1SMB5918BT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

NSN

5961-01-507-5101, 5961015075101

NIIN

015075101

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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