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1N5936BRLG

Onsemi

1N5936BRLG by Onsemi

1N5936BRLG by Onsemi is a Zener diode with 30V nominal voltage, 5% tolerance, and 12.5mA test current. It operates at up to 200 °C and has a max power dissipation of 1W. Ideal for applications requiring precise voltage regulation in electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 5,629 parts In-Stock

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Digiode

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Northwest PG Solutions

USA . 2,259 parts In-Stock

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AZTECH Wire

Italy . 115 parts In-Stock

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$9.050

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QUARKTWIN TECHNOLOGY LTD

USA . 18,875 parts In-Stock

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Metaverse IC Inc.

Canada . 12,000 parts In-Stock

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TANS Electronics

Latvia . 8,276 parts In-Stock

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Problanco Electronics

Mexico . 5,035 parts In-Stock

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Corphita

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Kulean Microsystems

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Native Components

USA . 915 parts In-Stock

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UHIMA Technologies

Türkiye . 768 parts In-Stock

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SupplyDigital Components

Austria . 333 parts In-Stock

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Corohmni

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Overview

Discover the superior quality and reliability of the Onsemi 1N5936BRLG Zener Diode, designed to provide precise voltage regulation in a wide range of applications. With a reputation for excellence in semiconductor manufacturing, Onsemi ensures that this diode delivers consistent performance and durability. Whether you're working on power supplies, voltage regulators, or other electronics projects, the 1N5936BRLG offers unparalleled value with its high voltage tolerance, low dynamic impedance, and efficient power dissipation. Trust Onsemi to bring innovation and efficiency to your designs with this top-of-the-line Zener Diode.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material makes the diode lightweight and durable, suitable for a variety of applications.

Working Test Current: 12.5 mA

High working test current ensures the diode can handle demanding electrical loads without malfunctioning.

Maximum Voltage Tolerance: 5 %

The low maximum voltage tolerance of 5% ensures accurate voltage regulation in circuits.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature of 200 °C, this diode can withstand elevated temperatures in industrial environments.

Maximum Power Dissipation: 1 W

The diode can dissipate up to 1W of power, making it suitable for high-power applications.

Nominal Reference Voltage: 30 V

The nominal reference voltage of 30V ensures precise voltage regulation in electronic circuits.

Technical Specifications

Zener Diodes 1N5936BRLG attributes and parameters. Explore more Zener Diodes devices from Onsemi

Specs

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Dynamic Impedance:

28 ohm

JEDEC-95 Code:

DO-41

JESD-30 Code:

O-PALF-W2

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

LONG FORM

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Maximum Power Dissipation:

1 W

Qualification:

Not Qualified

Nominal Reference Voltage:

30 V

Sub-Category:

Voltage Reference Diodes

Surface Mount:

NO

Technology:

ZENER

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Voltage Tolerance:

5 %

Working Test Current:

12.5 mA

Trade Compliance

1N5936BRLG Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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