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TDA8551T/N1/N,112

NXP Semiconductors

TDA8551T/N1/N,112 by NXP Semiconductors

TDA8551T/N1/N,112 by NXP Semiconductors is a volume control circuit with 8 terminals. It has low harmonic distortion of 0.15% and operates b/w -40 to 85°C. This audio IC is ideal for industrial applications requiring precise volume control in a compact package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Anansix

USA . 1,263 parts In-Stock

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Digiode

USA . 1,173 parts In-Stock

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Vyrian

USA . 1,170 parts In-Stock

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Nova Conductors

Japan . 50 parts In-Stock

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50

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Advanced Electronics

New Zealand . 500 parts In-Stock

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$0.822

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$0.748

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$0.674

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500

$0.822

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$0.674

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AZTECH Wire

Italy . 692 parts In-Stock

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$12.449

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One Stop Electronics

USA . 1,311 parts In-Stock

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$18.800

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UNI Independent Distributors

Spain . 6,682 parts In-Stock

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Corphita

USA . 1,626 parts In-Stock

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Aranea Global

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Overview

Elevate your audio experience with the TDA8551T/N1/N,112 by NXP Semiconductors. Crafted with precision and expertise, this Audio Control IC boasts unparalleled quality and reliability. Whether you're looking to enhance sound systems in automotive, home entertainment, or industrial applications, this volume control circuit delivers crisp, clear audio with minimal distortion. Say goodbye to inferior sound quality and hello to superior performance with the TDA8551T/N1/N,112. Elevate your audio experience today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components, ensuring a longer lifespan of the product.

Surface Mount: YES

Facilitates easy installation and saves space on the PCB, making it suitable for compact designs.

No. of Terminals: 8

Sufficient number of terminals for connecting various input and output connections, enhancing versatility.

Maximum Operating Temperature: 85 °C

Allows the IC to operate efficiently even in high temperature environments, ensuring consistent performance.

Minimum Operating Temperature: -40 °C

Capable of functioning in low temperature conditions, making it suitable for a wide range of applications.

Minimum Supply Voltage (Vsup): 2.7 V

Works with low supply voltages, making it energy efficient and suitable for battery-powered devices.

Maximum Supply Voltage (Vsup): 5.5 V

Supports a wide range of supply voltages, providing flexibility in design and compatibility with various systems.

Technical Specifications

Audio Control ICs TDA8551T/N1/N,112 attributes and parameters. Explore more Audio Control ICs devices from NXP Semiconductors

Specs

General IC Type:

Harmonic Distortion:

.15 %

JESD-30 Code:

R-PDSO-G8

Length:

4.9 mm

No. of Channels:

1

No. of Functions:

1

No. of Terminals:

8

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Seated Height:

1.75 mm

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.7 V

Surface Mount:

YES

Temperature Grade:

Terminal Form:

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Width:

3.9 mm

Trade Compliance

TDA8551T/N1/N,112 General Purpose ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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