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PZT4401,115

NXP Semiconductors

PZT4401,115 by NXP Semiconductors

NXP Semiconductors' PZT4401,115 is a NPN BJT with 40V VCEO and 0.6A IC, suitable for small signal applications. With hFE of 100 and fT of 250MHz, it offers high gain and frequency performance in a compact SOT-223 package. Ideal for surface mount designs requiring low power dissipation up to 1.15W at 150°C max temp.

Median Price

$0.206

Lifecycle Status

Suppliers In-Stock

11

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 47 parts In-Stock

1+ parts

$0.570

100+ parts

$0.226

1k+ parts

$0.163

10k+ parts

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47

$0.570

$0.226

$0.163

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Arrow

USA . 5,870 parts In-Stock

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$0.085

5,870

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$0.085

Rochester

USA . 4,300 parts In-Stock

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-

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$0.182

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$0.151

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$0.135

4,300

-

$0.182

$0.151

$0.135

DigiKey

USA . 4,300 parts In-Stock

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$0.230

4,300

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$0.230

Verical

USA . 3,950 parts In-Stock

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$0.169

3,950

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$0.169

Chip1Stop

Japan . 18 parts In-Stock

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$0.247

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18

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$0.247

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Distributors (In-Stock)

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Digiode

USA . 1,933 parts In-Stock

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$0.069

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$0.069

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Chip Stock

USA . 83,000 parts In-Stock

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Vyrian

USA . 5,942 parts In-Stock

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Anansix

USA . 942 parts In-Stock

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Nova Conductors

Japan . 15 parts In-Stock

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Corphita

USA . 780 parts In-Stock

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$0.066

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780

$0.066

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AZTECH Wire

Italy . 10,062 parts In-Stock

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$0.090

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10,062

$0.090

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Corohmni

South Africa . 4 parts In-Stock

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$0.324

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4

$0.324

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QUARKTWIN TECHNOLOGY LTD

USA . 24,726 parts In-Stock

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UNI Independent Distributors

Spain . 8,293 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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Microchip USA

USA . 5,793 parts In-Stock

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Continental Prestige Electronics

USA . 3,663 parts In-Stock

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Perfect Parts

USA . 2,872 parts In-Stock

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Argo Parts USA

USA . 2,506 parts In-Stock

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Aranea Global

USA . 1,000 parts In-Stock

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Kepictronics

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Supply Digital

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Overview

Unlock endless possibilities with the PZT4401,115 from NXP Semiconductors. This high-quality small signal bipolar junction transistor offers unparalleled performance and reliability for a wide range of applications. Whether you're looking to enhance your audio amplifiers, sensor circuits, or switching applications, this NPN transistor delivers exceptional value, benefits, and advantages. Trust NXP Semiconductors for top-notch semiconductor solutions that elevate your projects to new heights.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it suitable for a wide range of applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering versatility and flexibility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit design and makes the transistor easy to integrate into various electronic devices.

Surface Mount: YES

Surface mount capability allows for easy and efficient soldering onto printed circuit boards, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape provides a compact form factor, ideal for space-constrained applications.

Maximum Power Dissipation (Abs): 1.15 W

With a high power dissipation rating, this transistor can handle significant amounts of power without overheating.

Minimum DC Current Gain (hFE): 100

A high DC current gain ensures reliable and consistent performance in amplification circuits.

Maximum Operating Temperature: 150 °C

The high operating temperature range allows for reliable operation in various environmental conditions.

Maximum Collector-Emitter Voltage: 40 V

The high voltage rating enables the transistor to be used in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon transistors offer high performance, reliability, and efficiency, making them a popular choice for electronic applications.

Maximum Collector Current (IC): 0.6 A

The maximum collector current rating indicates the transistor's ability to handle current flow without damage, suitable for various load requirements.

Terminal Finish: TIN

Tin terminal finish provides good conductivity and solderability, ensuring a reliable electrical connection in the circuit.

Nominal Transition Frequency (fT): 250 MHz

High transition frequency allows for fast switching speeds and high-frequency operation, making the transistor suitable for RF and high-speed applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PZT4401,115 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PZT4401,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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