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PUSB3F96

NXP Semiconductors

PUSB3F96 by NXP Semiconductors

The NXP Semiconductors PUSB3F96 is a single transient suppression device with 10 terminals, operating from -40 to 85°C. It features a min breakdown voltage of 6V and unidirectional polarity, suitable for protecting electronic circuits against voltage spikes in various applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Chip Stock

USA . 132,000 parts In-Stock

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Bristol Electronics

USA . 2,118 parts In-Stock

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Dan-Mar Components

USA . 2,118 parts In-Stock

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Anansix

USA . 1,771 parts In-Stock

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Vyrian

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Nova Conductors

Japan . 500 parts In-Stock

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500

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Digiode

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Semi Source

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Prism Electronics

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Component Stockers USA

USA . 9,128 parts In-Stock

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$0.120

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$0.090

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$0.060

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One Stop Electronics

USA . 1,119 parts In-Stock

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$2.010

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Ampacity Inc.

Singapore . 587 parts In-Stock

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AZTECH Wire

Italy . 13,818 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Lixinc

USA . 17,081 parts In-Stock

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A-Z Elektronik GmbH

Germany . 13,000 parts In-Stock

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Kepictronics

USA . 11,800 parts In-Stock

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iodParts Technologies Inc.

India . 5,090 parts In-Stock

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UNI Independent Distributors

Spain . 4,754 parts In-Stock

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Corphita

USA . 1,429 parts In-Stock

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Bastille Electronics

Australia . 500 parts In-Stock

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Formix International (Excess)

India . 360 parts In-Stock

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Overview

Unlock the power of advanced transient suppression with the NXP Semiconductors PUSB3F96. Designed with precision and quality in mind, this single-configured device offers unparalleled protection against voltage spikes. Perfect for a wide range of applications, this compact yet powerful rectanglular-shaped device ensures reliable performance in any setting. Trust NXP Semiconductors to deliver cutting-edge technology that guarantees peace of mind for customers. Experience the difference with the PUSB3F96 - where quality meets innovation.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protects the device from external elements, ensuring durability and reliability.

Surface Mount: YES

Enables easy and convenient installation on PCBs, saving space and reducing assembly time.

Maximum Operating Temperature: 85 °C

Can operate efficiently at relatively high temperatures, suitable for a variety of applications.

Minimum Breakdown Voltage: 6 V

Provides protection by clamping voltage spikes above 6V, safeguarding sensitive components in electronic circuits.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

Designed specifically for transient voltage suppression, offering effective protection against voltage spikes.

Technical Specifications

Transient Suppression Devices PUSB3F96 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Additional Features:

IEC-61643-321

Minimum Breakdown Voltage:

6 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N10

No. of Elements:

1

No. of Terminals:

10

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-60134; IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

3 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

PUSB3F96 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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