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PUSB3AB6

NXP Semiconductors

PUSB3AB6 by NXP Semiconductors

The NXP Semiconductors PUSB3AB6 is a Transient Suppression Device with a max operating temperature of 85°C and a min breakdown voltage of 6V. It is used as a TRANS VOLTAGE SUPPRESSOR DIODE in applications requiring protection against voltage spikes, such as power supplies and communication systems.

Median Price

-

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip Stock

USA . 159,000 parts In-Stock

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Vyrian

USA . 6,106 parts In-Stock

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Anansix

USA . 1,566 parts In-Stock

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Digiode

USA . 1,505 parts In-Stock

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Nova Conductors

Japan . 450 parts In-Stock

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450

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Distributors (Availability)

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Ampacity Inc.

Singapore . 398 parts In-Stock

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$1.010

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$1.010

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One Stop Electronics

USA . 597 parts In-Stock

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$2.010

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597

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AZTECH Wire

Italy . 12,038 parts In-Stock

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$9.749

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Lixinc

USA . 7,247 parts In-Stock

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Corphita

USA . 4,388 parts In-Stock

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

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2,500

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UNI Independent Distributors

Spain . 2,438 parts In-Stock

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Supply Digital

USA . 924 parts In-Stock

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Aranea Global

USA . 100 parts In-Stock

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100

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Overview

Experience the unmatched quality and reliability of NXP Semiconductors with the PUSB3AB6 Transient Suppression Device. Designed to protect your electronic circuits from harmful voltage spikes, this cutting-edge technology offers peace of mind for your valuable equipment. With its small outline and no-lead terminal form, the PUSB3AB6 is easy to integrate into your designs. Whether you're working on automotive applications, consumer electronics, or industrial systems, this versatile diode is your go-to solution. Trust NXP Semiconductors and unlock the full potential of your devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body provides durability and resistance to environmental factors, making the product long-lasting.

No. of Terminals: 7

Having 7 terminals allows for efficient connectivity and ensures stable performance, making it a reliable choice for transient suppression.

Maximum Operating Temperature: 85 °C

The high maximum operating temperature of 85 °C ensures that the device can withstand harsh conditions and continue to function effectively.

Minimum Breakdown Voltage: 6 V

With a minimum breakdown voltage of 6 V, this transient suppression device offers protection against voltage spikes and surges, ensuring the safety of connected equipment.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of trans voltage suppressor diodes ensures efficient suppression of transient voltage spikes, safeguarding sensitive electronics from damage.

Technical Specifications

Transient Suppression Devices PUSB3AB6 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Additional Features:

IEC-61643-321

Minimum Breakdown Voltage:

6 V

Config:

1CA7

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N7

No. of Elements:

7

No. of Terminals:

7

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Polarity:

UNIDIRECTIONAL

Reference Standard:

IEC-60134; IEC-61000-4-2, 4-5

Maximum Repetitive Peak Reverse Voltage:

5 V

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Form:

Terminal Position:

Trade Compliance

PUSB3AB6 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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