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PMLL4148L/N,135

NXP Semiconductors

PMLL4148L/N,135 by NXP Semiconductors

PMLL4148L/N,135 by NXP Semiconductors is a single rectifier diode with a max forward voltage of 1V and output current of 0.2A. With a fast reverse recovery time of 0.004us, it operates at temperatures up to 200°C. Ideal for applications requiring high-speed switching in surface mount configurations.

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Digiode

USA . 3,569 parts In-Stock

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Vyrian

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Nova Conductors

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One Stop Electronics

USA . 1,621 parts In-Stock

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Semicontronic

India . 976 parts In-Stock

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Aztec Data Supply Inc.

USA . 133 parts In-Stock

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Corohmni

South Africa . 672 parts In-Stock

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Advanced Electronics

New Zealand . 115 parts In-Stock

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Ampacity Inc.

Singapore . 445 parts In-Stock

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AZTECH Wire

Italy . 776 parts In-Stock

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Continental Prestige Electronics

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Argo Parts USA

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Modulus Dynamics

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Bastille Electronics

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Robosynatics

Brazil . 10 parts In-Stock

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Lucentia Tech

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Overview

Experience superior quality and performance with the PMLL4148L/N,135 diode by NXP Semiconductors. This innovative product offers unmatched reliability and efficiency in a compact surface mount design. Perfect for a wide range of applications, this rectifier diode provides a maximum output current of 0.2A and a maximum reverse recovery time of 0.004us, making it ideal for demanding electronic circuits. Trust NXP Semiconductors to deliver cutting-edge technology that exceeds expectations and enhances your projects. Unlock a world of possibilities with the PMLL4148L/N,135 diode today!

Feature Benefit Bullets

Config: SINGLE

Single configuration simplifies the setup and ensures efficient performance.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and reducing assembly time.

Maximum Reverse Recovery Time: 0.004 us

Ultra-fast reverse recovery time ensures rapid switching and minimal energy loss.

Maximum Operating Temperature: 200 °C

High operating temperature range allows for reliable operation in various environmental conditions.

Diode Type: RECTIFIER DIODE

Rectifier diode type is ideal for converting AC to DC with high efficiency.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop minimizes power loss and enhances energy efficiency.

Maximum Output Current: 0.2 A

Suitable for applications requiring low to moderate current output.

Maximum Repetitive Peak Reverse Voltage: 100 V

Handles high peak reverse voltage, making it suitable for use in various circuit designs.

Maximum Non Repetitive Peak Forward Current: 4 A

Capable of handling temporary surge currents without damaging the diode.

Technical Specifications

Diodes & Rectifiers PMLL4148L/N,135 attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Type:

Maximum Forward Voltage (VF):

1 V

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

1

No. of Phases:

1

Maximum Operating Temperature:

200 Cel

Maximum Output Current:

.2 A

Maximum Repetitive Peak Reverse Voltage:

100 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Trade Compliance

PMLL4148L/N,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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