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PMLL4150T/R

NXP Semiconductors

PMLL4150T/R by NXP Semiconductors

PMLL4150T/R by NXP Semiconductors is a glass-packaged rectifier diode with a max reverse recovery time of 0.006 us and max forward voltage of 1V. It is ideal for applications requiring low power dissipation, such as in surface mount configurations for circuit protection.

Median Price

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Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 4,255 parts In-Stock

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Inland Empire Components Inc.

USA . 1,375 parts In-Stock

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Anansix

USA . 405 parts In-Stock

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Vyrian

USA . 161 parts In-Stock

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Nova Conductors

Japan . 83 parts In-Stock

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Semicontronic

India . 1,503 parts In-Stock

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$1.010

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$0.985

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$0.980

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One Stop Electronics

USA . 1,493 parts In-Stock

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$2.010

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AZTECH Wire

Italy . 760 parts In-Stock

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$14.835

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760

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Continental Prestige Electronics

USA . 4,018 parts In-Stock

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Corphita

USA . 3,172 parts In-Stock

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Argo Parts USA

USA . 2,368 parts In-Stock

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Aranea Global

USA . 500 parts In-Stock

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UNI Independent Distributors

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Overview

Looking for high-quality diodes and rectifiers? Look no further than the PMLL4150T/R by NXP Semiconductors. With a reputation for excellence in semiconductor manufacturing, NXP delivers top-notch products that are reliable and efficient. The PMLL4150T/R is perfect for a variety of applications, offering customers value and performance like no other. Whether you need it for power supplies, converters, or inverters, this rectifier diode will meet your needs with its low reverse recovery time and current. Upgrade to the PMLL4150T/R today and experience the benefits firsthand!

Feature Benefit Bullets

Package Body Material: GLASS

Glass packaging provides excellent thermal and electrical insulation, ensuring durability and reliability in various operating conditions.

No. of Terminals: 2

Having only 2 terminals simplifies the installation process and reduces complexity in circuit design.

Maximum Forward Voltage (VF): 1 V

Low forward voltage drop ensures efficient power conversion and minimal energy loss.

Maximum Output Current: 0.3 A

Ability to handle a maximum output current of 0.3 A makes this diode suitable for low to medium power applications.

Diode Element Material: SILICON

Silicon diodes offer high reliability, low leakage current, and consistent performance, making them ideal for various electronic applications.

Technical Specifications

Diodes & Rectifiers PMLL4150T/R attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Additional Features:

HIGH SPEED SWITCH

Case Connection:

ISOLATED

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1 V

JESD-30 Code:

O-LELF-R2

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

200 Cel

Maximum Output Current:

.3 A

Package Body Material:

GLASS

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

75 V

Maximum Reverse Current:

.1 uA

Maximum Reverse Recovery Time:

.006 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Form:

Terminal Position:

END

Trade Compliance

PMLL4150T/R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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