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PMGD370XN,115

NXP Semiconductors

PMGD370XN,115 by NXP Semiconductors

PMGD370XN,115 by NXP Semiconductors is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It has a min DS Breakdown Voltage of 30V, Max Drain Current of 0.74A, and Max Power Dissipation of 0.41W. This small outline transistor operates in enhancement mode at temperatures up to 150°C.

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Vyrian

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Digiode

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Overview

Discover the cutting-edge technology of the PMGD370XN,115 by NXP Semiconductors, a high-quality Small Signal Field Effect Transistor (FET) designed for switching applications. With a compact design and maximum power dissipation of 0.41W, this N-CHANNEL transistor offers reliable performance and efficiency in various electronic devices. Benefit from its 2 elements with built-in diode configuration and enhanced mode operation for seamless integration. Upgrade your products with the PMGD370XN,115 and experience unmatched quality and performance that NXP Semiconductors is renowned for.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides durability and reliability for this FET, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

The N-channel type allows for efficient switching performance, making this FET ideal for use in switching applications.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE

The separate configuration with 2 elements and built-in diode enhances the functionality and versatility of this FET.

Transistor Application: SWITCHING

Specifically designed for switching applications, this FET offers fast and efficient performance in controlling currents.

Surface Mount: YES

Being surface mountable makes installation convenient and saves space, making this FET a practical choice for compact designs.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET offers reliable performance and protection against voltage surges.

Package Shape: RECTANGULAR

The rectangular package shape enables easy integration into circuit boards, ensuring a secure and stable connection.

Terminal Form: GULL WING

The gull wing terminal form facilitates soldering and provides a strong mechanical connection for dependable operation.

Operating Mode: ENHANCEMENT MODE

Operating in enhancement mode allows for precise control over the FET's conductivity, offering optimal efficiency in various applications.

No. of Elements: 2

With 2 elements, this FET provides flexibility in circuit design and allows for more complex functions.

Maximum Drain Current (Abs) (ID): 0.74 A

The high maximum drain current of 0.74A ensures reliable and stable performance in handling current loads.

No. of Terminals: 6

With 6 terminals, this FET offers versatility in connectivity options for different circuit configurations.

Maximum Power Dissipation (Abs): 0.41 W

The maximum power dissipation of 0.41W ensures efficient heat management and reliable operation under varying load conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space and allows for easy installation in compact devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Utilizing metal-oxide semiconductor technology ensures high performance and reliability in various applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this FET can withstand high-temperature environments, enhancing its versatility.

Transistor Element Material: SILICON

The use of silicon as the transistor element material provides excellent conductivity and durability for long-lasting performance.

Terminal Finish: TIN

The tin terminal finish offers corrosion resistance and ensures stable electrical connections for dependable operation.

Maximum Drain-Source On Resistance: 0.44 ohm

The low maximum drain-source on resistance of 0.44 ohm ensures efficient conductivity and minimal power loss in the circuit.

Terminal Position: DUAL

With a dual terminal position, this FET offers flexibility in circuit connectivity and allows for versatile installation options.

Maximum Time At Peak Reflow Temperature (s): 30

This FET can withstand peak reflow temperatures for up to 30 seconds, ensuring reliable soldering and durability during assembly.

Peak Reflow Temperature °C: 260

The high peak reflow temperature of 260°C ensures proper soldering and reliable performance in high-temperature environments.

Technical Specifications

Small Signal Field Effect Transistors (FET) PMGD370XN,115 attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (Abs) (ID):

.74 A

Maximum Drain Current (ID):

.74 A

Maximum Drain-Source On Resistance:

.44 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

PMGD370XN,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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