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PESD5V0X1ULD,315

NXP Semiconductors

PESD5V0X1ULD,315 by NXP Semiconductors

PESD5V0X1ULD,315 by NXP Semiconductors is a unidirectional Trans Voltage Suppressor Diode with 5.8V min and 10V max breakdown voltage. It operates at a max temperature of 150°C and is designed for transient suppression applications in electronic circuits.

Median Price

$0.122

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 5,535,693 parts In-Stock

1+ parts

-

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10k+ parts

$0.113

5,535,693

-

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$0.113

Rochester

USA . 5,529,693 parts In-Stock

1+ parts

-

100+ parts

$0.122

1k+ parts

$0.101

10k+ parts

$0.090

5,529,693

-

$0.122

$0.101

$0.090

DigiKey

USA . 5,529,693 parts In-Stock

1+ parts

-

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-

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10k+ parts

$0.150

5,529,693

-

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-

$0.150

Arrow

USA . 70,000 parts In-Stock

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70,000

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Distributors (In-Stock)

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Digiode

USA . 3,777 parts In-Stock

1+ parts

$0.044

100+ parts

-

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3,777

$0.044

-

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Nova Conductors

Japan . 57 parts In-Stock

1+ parts

$0.083

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57

$0.083

-

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DigiKey Marketplace

USA . 5,539,631 parts In-Stock

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-

100+ parts

-

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$0.050

10k+ parts

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5,539,631

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$0.050

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Chip Stock

USA . 67,000 parts In-Stock

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67,000

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Vyrian

USA . 3,949 parts In-Stock

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3,949

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Anansix

USA . 2,177 parts In-Stock

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2,177

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Distributors (Availability)

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Corohmni

South Africa . 947 parts In-Stock

1+ parts

$0.018

100+ parts

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947

$0.018

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Ampacity Inc.

Singapore . 3,342,250 parts In-Stock

1+ parts

$0.039

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3,342,250

$0.039

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Corphita

USA . 1,009 parts In-Stock

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$0.041

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1,009

$0.041

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Continental Prestige Electronics

USA . 4,935 parts In-Stock

1+ parts

$0.083

100+ parts

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1k+ parts

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10k+ parts

$0.081

4,935

$0.083

-

-

$0.081

Argo Parts USA

USA . 2,974 parts In-Stock

1+ parts

$0.083

100+ parts

-

1k+ parts

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10k+ parts

$0.080

2,974

$0.083

-

-

$0.080

Bastille Electronics

Australia . 92 parts In-Stock

1+ parts

$0.083

100+ parts

$0.079

1k+ parts

$0.075

10k+ parts

$0.074

92

$0.083

$0.079

$0.075

$0.074

Semicontronic

India . 1,864,608 parts In-Stock

1+ parts

$0.085

100+ parts

$0.083

1k+ parts

$0.082

10k+ parts

-

1,864,608

$0.085

$0.083

$0.082

-

Aztec Data Supply Inc.

USA . 2,126 parts In-Stock

1+ parts

$0.130

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2,126

$0.130

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AZTECH Wire

Italy . 9,148 parts In-Stock

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$0.230

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$0.230

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Perfect Parts

USA . 145,771 parts In-Stock

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145,771

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Robosynatics

Brazil . 16,105 parts In-Stock

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16,105

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Lucentia Tech

USA . 16,105 parts In-Stock

1+ parts

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$0.070

1k+ parts

$0.068

10k+ parts

$0.068

16,105

-

$0.070

$0.068

$0.068

iodParts Technologies Inc.

India . 7,110 parts In-Stock

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Assy Fe

Spain . 7,094 parts In-Stock

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UNI Independent Distributors

Spain . 6,851 parts In-Stock

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A-Z Elektronik GmbH

Germany . 6,026 parts In-Stock

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6,026

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

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RC Electronics

USA . 2,700 parts In-Stock

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Supply Digital

USA . 199 parts In-Stock

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199

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Overview

Protect your electronics with the PESD5V0X1ULD,315 from NXP Semiconductors. This transient suppression device offers reliable quality and unmatched performance, ensuring your devices are safeguarded against voltage spikes and surges. Ideal for a wide range of applications, this product provides peace of mind knowing that your valuable equipment is protected. Trust NXP Semiconductors for top-notch technology and superior protection for your electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the device lightweight and durable, making it suitable for various applications.

Nominal Breakdown Voltage: 7.5 V

The nominal breakdown voltage of 7.5V ensures effective protection against transient overvoltage events, safeguarding connected equipment.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150°C, this device can withstand high temperature environments, increasing its reliability.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of a trans voltage suppressor diode ensures efficient suppression of voltage spikes and transient events, protecting electronic circuits.

Polarity: UNIDIRECTIONAL

The unidirectional polarity of the device allows it to protect against voltage spikes in a specific direction, offering targeted protection.

Technical Specifications

Transient Suppression Devices PESD5V0X1ULD,315 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Maximum Breakdown Voltage:

10 V

Minimum Breakdown Voltage:

5.8 V

Nominal Breakdown Voltage:

7.5 V

Config:

SINGLE

Diode Element Material:

SILICON

JESD-30 Code:

R-PDSO-N2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity:

UNIDIRECTIONAL

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

5.5 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Technology:

AVALANCHE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

PESD5V0X1ULD,315 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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