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PESD12VL2BT/S911,2

NXP Semiconductors

PESD12VL2BT/S911,2 by NXP Semiconductors

NXP Semiconductors' PESD12VL2BT/S911,2 is a bidirectional TRANS VOLTAGE SUPPRESSOR DIODE with 15.8V breakdown voltage and 12V peak reverse voltage. It features a max clamping voltage of 37V, making it ideal for transient suppression in surface mount applications.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

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Digiode

USA . 3,255 parts In-Stock

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Vyrian

USA . 2,297 parts In-Stock

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Anansix

USA . 677 parts In-Stock

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Nova Conductors

Japan . 150 parts In-Stock

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One Stop Electronics

USA . 884 parts In-Stock

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$0.010

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Corohmni

South Africa . 71 parts In-Stock

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$0.045

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Aztec Data Supply Inc.

USA . 4,611 parts In-Stock

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$0.140

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Semicontronic

India . 457 parts In-Stock

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$3.010

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$2.935

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$2.920

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457

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AZTECH Wire

Italy . 299 parts In-Stock

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$12.046

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UNI Independent Distributors

Spain . 7,759 parts In-Stock

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Continental Prestige Electronics

USA . 1,114 parts In-Stock

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Bastille Electronics

Australia . 650 parts In-Stock

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Corphita

USA . 400 parts In-Stock

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Argo Parts USA

USA . 268 parts In-Stock

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Advanced Electronics

New Zealand . 53 parts In-Stock

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Overview

Experience unparalleled protection and reliability with the PESD12VL2BT/S911,2 by NXP Semiconductors. As a leading manufacturer in the industry, NXP delivers top-of-the-line transient suppression devices that are essential for safeguarding your electronics against voltage spikes and surges. Whether you're looking to protect sensitive circuitry in automotive systems, consumer electronics, or industrial applications, this bidirectional diode offers maximum clamping voltage of 37V, ensuring peace of mind and uninterrupted performance. Trust NXP to provide superior quality and unmatched value for all your protection needs.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable allows for easy and convenient installation on PCBs, saving space and reducing assembly time.

Nominal Breakdown Voltage: 15.8 V

The high breakdown voltage helps in protecting sensitive electronic components from overvoltage spikes or transients, ensuring robust protection.

Diode Type: TRANS VOLTAGE SUPPRESSOR DIODE

The use of transient voltage suppressor diode ensures fast response and effective suppression of voltage transients, safeguarding the connected circuitry.

Maximum Repetitive Peak Reverse Voltage: 12 V

The capability to withstand repetitive peak reverse voltages up to 12 V makes this product suitable for applications where frequent transients occur.

Polarity: BIDIRECTIONAL

The bidirectional nature allows the device to provide protection against both positive and negative voltage transients, enhancing overall circuit protection.

Maximum Clamping Voltage: 37 V

The low clamping voltage ensures that the voltage across the protected circuitry is limited to a safe level during transient events, preventing damage to sensitive components.

Technical Specifications

Transient Suppression Devices PESD12VL2BT/S911,2 attributes and parameters. Explore more Transient Suppression Devices devices from NXP Semiconductors

Specs

Nominal Breakdown Voltage:

15.8 V

Maximum Clamping Voltage:

37 V

Polarity:

BIDIRECTIONAL

Maximum Repetitive Peak Reverse Voltage:

12 V

Sub-Category:

Transient Suppressors

Surface Mount:

YES

Trade Compliance

PESD12VL2BT/S911,2 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.50

SB

8541.10.00.50

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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