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PBSS5540Z,115

NXP Semiconductors

PBSS5540Z,115 by NXP Semiconductors

NXP Semiconductors' PBSS5540Z,115 is a PNP BJT transistor for switching applications. With 40V max collector-emitter voltage and 5A max collector current, it offers high performance in a small outline package. Featuring 250 min DC current gain and 120MHz nominal transition frequency, it's ideal for power management circuits.

Median Price

$0.160

Lifecycle Status

Suppliers In-Stock

18

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 100,000 parts In-Stock

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$0.170

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$0.170

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$0.160

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$0.170

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Newark

USA . 24 parts In-Stock

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$1.140

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$1.140

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Verical

USA . 160,000 parts In-Stock

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$0.123

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Elektronika Sales Private Limited

India . 50,000 parts In-Stock

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Chip1Stop

Japan . 4,000 parts In-Stock

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$0.150

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$0.127

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RS (Exports)

UK . 1,930 parts In-Stock

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Arrow

USA . 996 parts In-Stock

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$0.085

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$0.085

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Digiode

USA . 3,407 parts In-Stock

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Nova Conductors

Japan . 87 parts In-Stock

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Infinite Electronics LLP

India . 201,000 parts In-Stock

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Chip Stock

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NAC Semi

USA . 52,000 parts In-Stock

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Vyrian

USA . 3,623 parts In-Stock

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Anansix

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IBS Electronics

USA . 1,000 parts In-Stock

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$0.155

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$0.151

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$0.151

Prism Electronics

USA . 370 parts In-Stock

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370

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Elcom Components

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Euro-Tech

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85

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Ampacity Inc.

Singapore . 53,382 parts In-Stock

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$0.072

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$0.072

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Vigor

Singapore . 304 parts In-Stock

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$0.090

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Corphita

USA . 2,552 parts In-Stock

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$0.098

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Netroflash

USA . 100 parts In-Stock

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$0.135

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$0.133

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Semicontronic

India . 53,909 parts In-Stock

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$0.157

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$0.153

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$0.152

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Corohmni

South Africa . 250 parts In-Stock

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AZTECH Wire

Italy . 5,080 parts In-Stock

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$0.240

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Continental Prestige Electronics

USA . 305,000 parts In-Stock

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Infinite Electronics LLP (Excess)

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GreenTree Electronics

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Eastek

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Glotronic Ltd.

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Futuretech Components

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UNI Independent Distributors

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Authorized Procurement Solutions

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Argo Parts USA

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Perfect Parts

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Kepictronics

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Speed Components Ltd (Excess)

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Supply Digital

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Overview

Discover the NXP Semiconductors PBSS5540Z,115 Power Bipolar Junction Transistor, a high-quality PNP transistor designed for switching applications. With its durable plastic/epoxy body and small outline package, this transistor offers superior performance and reliability. Ideal for a wide range of electronic projects, this transistor boasts a maximum collector-emitter voltage of 40V and a maximum collector current of 5A, providing customers with the power they need for their designs. Trust NXP Semiconductors for top-of-the-line components that deliver outstanding results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the transistor lightweight and durable, ideal for various applications.

Polarity or Channel Type: PNP

PNP transistors are well-suited for high-speed switching applications, making this product efficient in switching operations.

Configuration: SINGLE

Single configuration simplifies the circuit design and makes the transistor easy to use in applications.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable and efficient performance in such scenarios.

Surface Mount: YES

Surface mount capability allows for easy installation on circuit boards, saving space and providing a clean finish.

Maximum Power Dissipation (Abs): 1.35 W

With a high maximum power dissipation, this transistor can handle heat effectively and operate at higher power levels.

Minimum DC Current Gain (hFE): 250

A minimum DC current gain of 250 ensures a stable and consistent amplification of signals in the circuit.

Maximum Operating Temperature: 150 °C

Operating up to 150°C, this transistor is suitable for applications that require reliable performance at elevated temperatures.

Maximum Collector-Emitter Voltage: 40 V

The high maximum collector-emitter voltage rating allows for safe operation in circuits with higher voltage levels.

Maximum Collector Current (IC): 5 A

With a high collector current rating, this transistor can handle larger current flows, making it suitable for high-power applications.

Nominal Transition Frequency (fT): 120 MHz

The high nominal transition frequency enables fast response times and efficient switching in high-frequency applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PBSS5540Z,115 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

5 A

Maximum Collector-Emitter Voltage:

40 V

Configuration:

Minimum DC Current Gain (hFE):

250

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PBSS5540Z,115 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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