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PBSS5350Z,135

NXP Semiconductors

PBSS5350Z,135 by NXP Semiconductors

PBSS5350Z,135 by NXP Semiconductors is a PNP BJT transistor with 50V VCE, 3A IC, and 2W power dissipation. Ideal for switching applications due to its high transition frequency of 100MHz and small outline package shape.

Median Price

$0.118

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

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Arrow

USA . 372,000 parts In-Stock

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Verical

USA . 372,000 parts In-Stock

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$0.100

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$0.100

Elektronika Sales Private Limited

India . 260,000 parts In-Stock

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TTI

USA . 20,000 parts In-Stock

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$0.081

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$0.081

Chip1Stop

Japan . 5,898 parts In-Stock

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$0.137

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$0.137

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Rochester

USA . 449 parts In-Stock

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$0.230

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$0.191

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$0.170

449

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$0.170

DigiKey

USA . 449 parts In-Stock

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$0.670

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449

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$0.670

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Distributors (In-Stock)

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Digiode

USA . 3,729 parts In-Stock

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$0.075

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$0.075

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Maritex

Poland . 54 parts In-Stock

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$0.107

100+ parts

$0.086

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$0.063

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$0.045

54

$0.107

$0.086

$0.063

$0.045

IBS Electronics

USA . 1,348,000 parts In-Stock

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$0.736

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NAC Semi

USA . 1,080,000 parts In-Stock

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Chip Stock

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Cyclops Electronics Ltd

UK . 66,427 parts In-Stock

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Sensible Micro Corp

USA . 16,000 parts In-Stock

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Vyrian

USA . 4,735 parts In-Stock

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Anansix

USA . 2,592 parts In-Stock

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Nova Conductors

Japan . 750 parts In-Stock

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750

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Connector Distribution Corp

USA . 400 parts In-Stock

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400

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Right Parts Inc.

USA . 400 parts In-Stock

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400

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ComSIT Distribution GmbH

Germany . 272 parts In-Stock

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Distributors (Availability)

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Semicontronic

India . 54,523 parts In-Stock

1+ parts

$0.067

100+ parts

$0.065

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$0.065

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54,523

$0.067

$0.065

$0.065

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Corphita

USA . 685 parts In-Stock

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$0.071

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685

$0.071

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Component Stockers USA

USA . 1,080,650 parts In-Stock

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$0.080

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$0.080

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$0.070

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$0.070

1,080,650

$0.080

$0.080

$0.070

$0.070

AZTECH Wire

Italy . 6,457 parts In-Stock

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$0.120

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$0.120

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Modulus Dynamics

Lithuania . 7,734 parts In-Stock

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$0.121

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$0.121

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$0.121

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Corohmni

South Africa . 1,237 parts In-Stock

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Continental Prestige Electronics

USA . 14,573 parts In-Stock

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$0.370

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$0.176

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$0.084

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Perfect Parts

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Eastek

USA . 336,000 parts In-Stock

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GreenTree Electronics

Israel . 332,000 parts In-Stock

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Metaverse IC Inc.

Canada . 31,800 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

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Lixinc

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iodParts Technologies Inc.

India . 9,625 parts In-Stock

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A-Z Elektronik GmbH

Germany . 7,089 parts In-Stock

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S.R.D Solutions

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Glotronic Ltd.

UK . 6,400 parts In-Stock

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UNI Independent Distributors

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Authorized Procurement Solutions

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Argo Parts USA

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Aranea Global

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Supply Digital

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Ashlea Components Ltd (Excess)

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Overview

Unleash the power of innovation with the PBSS5350Z,135 by NXP Semiconductors. Crafted with precision and expertise, this Power Bipolar Junction Transistor (BJT) offers unparalleled performance in switching applications. Ideal for a wide range of electronic devices, this PNP transistor boasts a compact design and high reliability. Elevate your projects with the quality and value that NXP Semiconductors is renowned for, and experience the difference with the PBSS5350Z,135.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, making it suitable for various applications.

Polarity or Channel Type: PNP

Suitable for circuits where PNP transistors are required, offering flexibility in design.

Configuration: SINGLE

Simplified design with a single transistor, making it easy to implement in circuits.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such scenarios.

Surface Mount: YES

Allows for easy mounting onto circuit boards, saving space and enhancing efficiency.

Package Shape: RECTANGULAR

Standard shape for easy handling and installation in various electronic devices.

Terminal Form: GULL WING

Facilitates easy soldering and connectivity in surface mount applications.

No. of Terminals: 4

Provides necessary connectivity for the transistor to function efficiently in a circuit.

Maximum Power Dissipation (Abs): 2 W

Ability to handle higher power dissipation ensures the transistor can handle demanding applications.

Package Style (Meter): SMALL OUTLINE

Compact size makes it suitable for devices with limited space, while still offering high performance.

Minimum DC Current Gain (hFE): 200

High current gain ensures reliable and efficient amplification in the circuit.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without compromising performance, suitable for various environments.

Maximum Collector-Emitter Voltage: 50 V

Provides higher voltage handling capability, making it suitable for applications with higher voltage requirements.

Transistor Element Material: SILICON

Silicon material offers high performance and reliability in electronic circuits.

Maximum Collector Current (IC): 3 A

Handles high collector currents, making it suitable for applications that require higher current handling.

Terminal Finish: TIN

Tin finish ensures good solderability and reliable connections for the transistor.

Terminal Position: DUAL

Provides flexibility in circuit design by offering dual terminal positioning options.

Case Connection: COLLECTOR

Collector case connection ensures efficient heat dissipation, enhancing overall performance.

Maximum Time At Peak Reflow Temperature (s): 30

Ensures reliable soldering during the reflow process, maintaining connection integrity.

Peak Reflow Temperature °C: 260

Withstands high reflow temperatures, making it suitable for surface mount assembly processes.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency enables fast switching speeds, ideal for switching applications.

Technical Specifications

Power Bipolar Junction Transistors (BJT) PBSS5350Z,135 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

3 A

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PBSS5350Z,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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