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HEF4011BP,652

NXP Semiconductors

HEF4011BP,652 by NXP Semiconductors

HEF4011BP,652 by NXP Semiconductors is a CMOS Logic Gates IC with 4 functions and 2 inputs. It operates at a supply voltage range of 3-15V, offering a propagation delay of 110ns. Ideal for industrial applications requiring high-speed signal processing in compact designs.

Median Price

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Lifecycle Status

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7

In-Stock Inventory

1k+

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Vyrian

USA . 11,660 parts In-Stock

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Digiode

USA . 3,664 parts In-Stock

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ComSIT Distribution GmbH

Germany . 1,475 parts In-Stock

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ComSIT USA

USA . 1,475 parts In-Stock

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Anansix

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Nova Conductors

Japan . 200 parts In-Stock

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Cogito LLC

Ukraine . 76 parts In-Stock

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AZTECH Wire

Italy . 750 parts In-Stock

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$9.303

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Microchip USA

USA . 202 parts In-Stock

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Advanced Electronics

New Zealand . 1,000 parts In-Stock

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Corohmni

South Africa . 435 parts In-Stock

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One Stop Electronics

USA . 1,542 parts In-Stock

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Aztec Data Supply Inc.

USA . 4,788 parts In-Stock

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Ampacity Inc.

Singapore . 375 parts In-Stock

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UNI Independent Distributors

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Continental Prestige Electronics

USA . 3,853 parts In-Stock

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Corphita

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Perfect Parts

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Argo Parts USA

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Bastille Electronics

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Overview

Unleash the power of innovation with the HEF4011BP,652 by NXP Semiconductors! This high-quality logic gate offers unmatched reliability and performance, making it perfect for a wide range of applications. From industrial automation to consumer electronics, this versatile component delivers superior results every time. Experience the value and benefits of cutting-edge technology with the HEF4011BP,652 - the ultimate choice for your next project.

Feature Benefit Bullets

Propagation Delay At Nominal Supply: 110 ns

Low propagation delay ensures fast processing speed and efficiency.

No. of Functions: 4

Having multiple functions in one component can save space and simplify circuit design.

Nominal Supply Voltage / Vsup (V): 5

Compatible with standard 5V power supplies, making it easy to integrate into existing systems.

Terminal Pitch: 2.54 mm

Standard terminal pitch allows for easy connection to a breadboard or PCB.

Technical Specifications

Logic Gates HEF4011BP,652 attributes and parameters. Explore more Logic Gates devices from NXP Semiconductors

Specs

Family:

4000/14000/40000

JESD-30 Code:

R-PDIP-T14

JESD-609 Code:

e4

Length:

19.025 mm

Load Capacitance (CL):

50 pF

Logic IC Type:

Maximum I (ol):

.36 Amp

No. of Functions:

4

No. of Inputs:

2

No. of Terminals:

14

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Package Body Material:

PLASTIC/EPOXY

Package Code:

DIP

Package Equivalence Code:

DIP14,.3

Package Shape:

Package Style (Meter):

IN-LINE

Power Supplies (V):

5/15

Propagation Delay At Nominal Supply:

110 ns

Propagation Delay (tpd):

110 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

4.2 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

15 V

Minimum Supply Voltage (Vsup):

3 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

NO

Technology:

CMOS

Temperature Grade:

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width:

7.62 mm

Trade Compliance

HEF4011BP,652 Logic ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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