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HEC4066BDB

NXP Semiconductors

HEC4066BDB by NXP Semiconductors

HEC4066BDB by NXP Semiconductors is a military-grade CMOS multiplexer with 4 functions, operating b/w -55 °C to 125 °C. It features a max on-state resistance of 175Ω and a nominal voltage of 15V. Ideal for precision switching in harsh environments.

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Native Components

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Northwest PG Solutions

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Overview

Elevate your designs with the HEC4066BDB from NXP Semiconductors, a trusted leader in innovation. This high-quality multiplexer offers exceptional reliability and performance, making it perfect for military applications where precision is critical. With its robust ceramic construction and impressive temperature range, this device ensures durability in challenging environments. Experience superior value with reduced power consumption and fast switching times, empowering your projects to achieve new heights of efficiency and effectiveness.

Feature Benefit Bullets

Package Body Material: CERAMIC, GLASS-SEALED

The ceramic, glass-sealed construction provides excellent protection against environmental factors, ensuring durability and reliability in harsh conditions.

No. of Functions: 4

With four functions, this multiplexer/switch allows for versatile signal routing and increased functionality in complex circuits.

Package Shape: RECTANGULAR

The rectangular shape optimizes space utilization on PCBs, making it easier to integrate into various designs.

Nominal Supply Voltage (Vsup): 15 V

A nominal supply voltage of 15V makes it compatible with a wide range of applications requiring consistent performance.

No. of Terminals: 14

The 14 terminal configuration provides ample connectivity options for various circuit designs.

Package Style (Meter): IN-LINE

The in-line package style eases integration into straight-line layouts, improving overall assembly efficiency.

Maximum Operating Temperature: 125 °C

A maximum operating temperature of 125 °C allows the product to operate reliably in high-temperature environments, suitable for demanding applications.

Minimum Operating Temperature: -55 °C

This component can function in extreme cold conditions, making it ideal for aerospace and military applications.

Terminal Position: DUAL

Dual terminal positions enhance flexibility during installation, aiding in space-constrained designs.

Maximum Seated Height: 5.08 mm

The compact seated height helps conserve space on the PCB, making it easier to incorporate multiple components in close proximity.

Width: 7.62 mm

A width of 7.62 mm contributes to its compact design, facilitating integration into tight spaces.

Other IC type: SPST

As a Single Pole Single Throw (SPST) switch, it offers simple control over a single signal line, minimizing circuit complexity.

Maximum On-state Resistance (Ron): 175 ohm

Low on-state resistance reduces power losses, enhancing efficiency in electronic circuits.

Maximum Switch-on Time: 30 ns

Fast switching times (30 ns) improve performance in high-speed applications, reducing latency.

Maximum Switch-off Time: 140 ns

Quick switch-off times (140 ns) enable rapid signal processing, beneficial for applications requiring swift response.

Temperature Grade: MILITARY

The military-grade specifications ensure outstanding performance and reliability even in extreme environmental conditions.

Maximum Supply Current (Isup): 0.03 mA

A low maximum supply current helps conserve energy, making it ideal for battery-operated devices.

Technology: CMOS

CMOS technology provides low static power consumption, improving energy efficiency and circuit longevity.

Terminal Form: THROUGH-HOLE

Through-hole terminals enhance mechanical stability and are easy to solder, ensuring reliable connections.

Nominal Negative Supply Voltage (Vsup): 0 V

Having a nominal negative supply voltage of 0V simplifies design requirements and prevents issues with negative potentials.

Terminal Pitch: 2.54 mm

A terminal pitch of 2.54 mm makes it compatible with standard PCB layouts, facilitating ease of design and assembly.

Nominal Off-state Isolation: 50 dB

High off-state isolation (50 dB) minimizes crosstalk and signal interference, enhancing circuit performance.

Nominal On-state Resistance Match: 5 ohm

A matched on-state resistance of 5 ohm ensures consistent performance across different switches, optimizing signal integrity.

Technical Specifications

Multiplexers & Switches HEC4066BDB attributes and parameters. Explore more Multiplexers & Switches devices from NXP Semiconductors

Specs

Other IC type:

JESD-30 Code:

R-GDIP-T14

Nominal Negative Supply Voltage (Vsup):

0 V

No. of Channels:

1

No. of Functions:

4

No. of Terminals:

14

Nominal Off-state Isolation:

50 dB

Nominal On-state Resistance Match:

5 ohm

Maximum On-state Resistance (Ron):

175 ohm

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

CERAMIC, GLASS-SEALED

Package Code:

DIP

Package Shape:

Package Style (Meter):

IN-LINE

Qualification:

Not Qualified

Maximum Seated Height:

5.08 mm

Maximum Supply Current (Isup):

.03 mA

Nominal Supply Voltage (Vsup):

15 V

Surface Mount:

NO

Maximum Switch-off Time:

140 ns

Maximum Switch-on Time:

30 ns

Technology:

CMOS

Temperature Grade:

Terminal Form:

THROUGH-HOLE

Terminal Pitch:

2.54 mm

Terminal Position:

DUAL

Width (mm):

7.62 mm

Trade Compliance

HEC4066BDB Other Function Semiconductors trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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