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CGD987HCI

NXP Semiconductors

CGD987HCI by NXP Semiconductors

CGD987HCI by NXP Semiconductors is a narrow band high power RF amplifier module with a gain of 26 dB. It operates b/w 40 MHz and 1003 MHz, functioning effectively in temperatures from -20 °C to 100 °C. Ideal for RF applications requiring robust performance and reliability.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,743 parts In-Stock

1+ parts

-

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1k+ parts

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4,743

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Vyrian

USA . 1,620 parts In-Stock

1+ parts

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1,620

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Anansix

USA . 179 parts In-Stock

1+ parts

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179

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 327 parts In-Stock

1+ parts

$0.750

100+ parts

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1k+ parts

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327

$0.750

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Northwest PG Solutions

USA . 1,789 parts In-Stock

1+ parts

$0.825

100+ parts

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10k+ parts

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1,789

$0.825

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One Stop Electronics

USA . 837 parts In-Stock

1+ parts

$9.000

100+ parts

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1k+ parts

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837

$9.000

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UNI Independent Distributors

Spain . 5,367 parts In-Stock

1+ parts

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5,367

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Corphita

USA . 3,673 parts In-Stock

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3,673

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Perfect Parts

USA . 125 parts In-Stock

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125

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Overview

Elevate your RF applications with the CGD987HCI from NXP Semiconductors—where quality meets innovation. This high-power amplifier module delivers impressive gain while ensuring reliability in demanding environments, making it an ideal choice for communication systems and broadcasting. With exceptional temperature resilience and gold terminal finish, the CGD987HCI enhances performance and longevity, empowering your projects with superior signal strength and clarity.

Feature Benefit Bullets

Construction: MODULE

The module construction offers a compact and efficient design, making it ideal for integration into various systems and reducing space requirements.

Maximum Operating Temperature: 100 °C

With a maximum operating temperature of 100 °C, this amplifier ensures reliable performance even in demanding environments, enhancing its suitability for industrial applications.

Minimum Operating Temperature: -20 °C

The wide temperature range starting at -20 °C allows for use in colder climates, thus expanding the operational versatility of the amplifier.

Terminal Finish: GOLD

The gold terminal finish provides excellent conductivity and corrosion resistance, ensuring long-term reliability and performance of the connections.

RF or Microwave Device Type: NARROW BAND HIGH POWER

As a narrow band high power device, this amplifier excels in specific frequency applications, delivering optimal performance for specialized RF and microwave tasks.

Characteristic Impedance: 75 ohm

The 75 ohm characteristic impedance is ideal for cable television and video applications, making it a great choice for media transmission systems.

Gain: 26 dB

With a gain of 26 dB, this amplifier enhances signal strength significantly, which is essential for reliable communication in RF applications.

Minimum Operating Frequency: 40 MHz

The low minimum operating frequency of 40 MHz ensures compatibility with a variety of RF applications, making this amplifier versatile in different use cases.

Maximum Operating Frequency: 1003 MHz

The high maximum operating frequency of 1003 MHz allows for the amplification of high-frequency signals, providing superior performance in modern communication standards.

Technical Specifications

RF & Microwave Amplifiers CGD987HCI attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Characteristic Impedance:

75 ohm

Construction:

MODULE

Gain:

26 dB

JESD-609 Code:

e4

Maximum Operating Frequency:

1003 MHz

Minimum Operating Frequency:

40 MHz

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

RF or Microwave Device Type:

Terminal Finish:

GOLD

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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