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BT169H,112

NXP Semiconductors

BT169H,112 by NXP Semiconductors

BT169H,112 by NXP Semiconductors is a reliable SCR with a max on-state voltage of 1.7 V and can handle up to 10 A peak current. It operates efficiently in temperatures from -40 °C to 150 °C, making it ideal for power control applications. With low gate trigger current of just 0.1 mA, it's perfect for energy-efficient designs.

Median Price

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Lifecycle Status

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3

In-Stock Inventory

1k+

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Vyrian

USA . 7,129 parts In-Stock

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Anansix

USA . 523 parts In-Stock

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Digiode

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Microchip USA

USA . 142 parts In-Stock

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$0.373

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AZTECH Wire

Italy . 1,008 parts In-Stock

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$15.110

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One Stop Electronics

USA . 758 parts In-Stock

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UNI Independent Distributors

Spain . 3,887 parts In-Stock

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Corphita

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Northwest PG Solutions

USA . 1,725 parts In-Stock

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Native Components

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Overview

Elevate your projects with the BT169H,112 from NXP Semiconductors—a leader in innovative electronic solutions. This Silicon Controlled Rectifier offers exceptional reliability and performance, making it ideal for a wide range of applications, from motor control to power management. With low trigger current and robust thermal capabilities, it ensures efficiency and longevity, empowering customers to achieve superior results while minimizing downtime. Experience the quality and dependability that only NXP can deliver!

Feature Benefit Bullets

Maximum On-state Voltage: 1.7 V

Low on-state voltage ensures reduced power loss and improved efficiency in circuits.

Maximum DC Gate Trigger Current: 0.1 mA

Requires very low gate current to trigger, allowing for energy-saving designs and easier interfacing with low-power control circuits.

Non Repetitive Peak On-state Current: 10 A

Can handle high peak currents safely, making it suitable for applications with sudden load changes.

Maximum On-state Current: 0.5 A

Can operate effectively in low to moderate current applications, providing versatility in its usage.

Maximum Leakage Current: 0.1 mA

Low leakage current minimizes energy waste and heat generation when the device is in the off-state.

Maximum Operating Temperature: 150 °C

High operating temperature range allows for reliable performance in harsh environments.

Trigger Device Type: SCR

SCR technology is well-known for its reliability and robustness in controlling high power loads.

Minimum Operating Temperature: -40 °C

Designed to function well in extremely low temperatures, enhancing its application in diverse climates.

Terminal Finish: Tin (Sn)

Tin finish provides good solderability and corrosion resistance, ensuring durability in connections.

Maximum DC Gate Trigger Voltage: 0.8 V

Low voltage requirement for gate triggering allows for compatibility with standard logic levels in control circuits.

Repetitive Peak Off-state Voltage: 800 V

High off-state voltage capability ensures reliable operation in high-voltage applications.

Minimum Critical Rate of Rise of Off-state Voltage: 150 V/us

Ability to withstand fast voltage changes makes it ideal for applications needing rapid switching.

Maximum Holding Current: 3 mA

Low holding current contributes to the capability of maintaining turn-off with minimal continuous power.

Nominal Circuit Commutated Turn-off Time: 100 µs

Fast turn-off time enhances the overall response and performance in switching applications.

Technical Specifications

Silicon Controlled Rectifiers (SCR) BT169H,112 attributes and parameters. Explore more Silicon Controlled Rectifiers (SCR) devices from NXP Semiconductors

Specs

Nominal Circuit Commutated Turn-off Time:

100 us

Minimum Critical Rate of Rise of Off-state Voltage:

150 V/us

Maximum DC Gate Trigger Current:

.1 mA

Maximum DC Gate Trigger Voltage:

.8 V

Maximum Holding Current:

3 mA

JESD-609 Code:

e3

Maximum Leakage Current:

.1 mA

Non Repetitive Peak On-state Current:

10 A

Maximum On-state Voltage:

1.7 V

Maximum On-state Current:

.5 A

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-40 Cel

Repetitive Peak Off-state Voltage:

800 V

Sub-Category:

Silicon Controlled Rectifiers

Surface Mount:

NO

Terminal Finish:

Tin (Sn)

Trigger Device Type:

SCR

Trade Compliance

BT169H,112 Triggering Devices trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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