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BGY885A/07,112

NXP Semiconductors

BGY885A/07,112 by NXP Semiconductors

BGY885A/07,112 by NXP Semiconductors is a hybrid RF amplifier designed for high-performance applications. It operates at 24V with a max supply current of 240mA and withstands temperatures from -20 °C to 100 °C. Ideal for demanding RF & microwave tasks, it ensures reliability in various environments.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,151 parts In-Stock

1+ parts

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4,151

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Anansix

USA . 2,433 parts In-Stock

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2,433

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Vyrian

USA . 113 parts In-Stock

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113

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 440 parts In-Stock

1+ parts

$17.000

100+ parts

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440

$17.000

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Corphita

USA . 4,264 parts In-Stock

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4,264

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UNI Independent Distributors

Spain . 3,131 parts In-Stock

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3,131

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Native Components

USA . 969 parts In-Stock

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969

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Northwest PG Solutions

USA . 650 parts In-Stock

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650

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Overview

Unlock superior performance with the BGY885A/07,112 by NXP Semiconductors, a leader in innovation. This RF & Microwave Amplifier is designed for unmatched reliability and efficiency across various applications, from telecommunications to industrial systems. With its robust hybrid technology and operational flexibility, it ensures consistent quality even in extreme conditions. Choose NXP for exceptional value and gain a competitive edge with every signal transmitted!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy for the package body ensures durability and resistance to environmental factors, making this amplifier reliable for various applications.

Power Supplies (V): 24

With a power supply requirement of 24V, this amplifier can be easily integrated into standard RF systems, providing versatility and convenience.

Maximum Operating Temperature: 100 °C

The high maximum operating temperature of 100 °C indicates robust thermal performance, allowing the amplifier to function optimally in demanding environments.

Minimum Operating Temperature: -20 °C

A minimum operating temperature of -20 °C expands the application's range, making it suitable for outdoor and extreme-condition scenarios.

Technology: HYBRID

The hybrid technology typically combines both active and passive components, leading to improved performance and efficiency in signal amplification.

Maximum Supply Current: 240 mA

A maximum supply current of 240 mA allows for high-performance output while maintaining energy efficiency, making the product suitable for both portable and stationary applications.

Technical Specifications

RF & Microwave Amplifiers BGY885A/07,112 attributes and parameters. Explore more RF & Microwave Amplifiers devices from NXP Semiconductors

Specs

No. of Functions:

1

Maximum Operating Temperature:

100 Cel

Minimum Operating Temperature:

-20 Cel

Package Body Material:

Package Equivalence Code:

SOT-115J

Power Supplies (V):

24

Sub-Category:

RF/Microwave Amplifiers

Maximum Supply Current:

240 mA

Technology:

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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