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BFR92AW/T3

NXP Semiconductors

BFR92AW/T3 by NXP Semiconductors

BFR92AW/T3 by NXP Semiconductors is an NPN single transistor ideal for RF applications. It features a max power dissipation of 0.3W, a nominal transition frequency of 3500 MHz, and operates up to 150 °C. This versatile surface mount device excels in amplifying signals efficiently.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Vyrian

USA . 4,424 parts In-Stock

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Digiode

USA . 1,377 parts In-Stock

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Anansix

USA . 518 parts In-Stock

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518

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Native Components

USA . 169 parts In-Stock

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$1.734

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169

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Northwest PG Solutions

USA . 75 parts In-Stock

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$1.907

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One Stop Electronics

USA . 1,457 parts In-Stock

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$57.050

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UNI Independent Distributors

Spain . 7,126 parts In-Stock

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Corphita

USA . 3,738 parts In-Stock

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Overview

Elevate your projects with the BFR92AW/T3 from NXP Semiconductors, a trusted name in innovation. This high-performance NPN transistor is designed for versatility, making it ideal for various applications such as RF amplification and signal processing. With impressive power dissipation and a robust operating temperature range, this surface-mount solution ensures reliability and efficiency. Choose BFR92AW/T3 to enhance your designs and benefit from NXP's commitment to quality and excellence!

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are widely used in switching and amplification applications, making this product versatile for various electronic designs.

Configuration: SINGLE

A single configuration allows for easy integration into circuits while maintaining compact sizing, ideal for space-constrained applications.

Surface Mount: YES

Surface mount technology enables efficient automated assembly processes and saves space on printed circuit boards, enhancing overall design efficiency.

Maximum Power Dissipation (Abs): 0.3 W

A maximum power dissipation of 0.3 W indicates suitable handling of power levels for many low to moderate power applications, ensuring reliable operation.

Minimum DC Current Gain (hFE): 65

A minimum DC current gain of 65 ensures good amplification capabilities, making this transistor effective for various signal processing tasks.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature of 150 °C allows this product to be utilized in demanding environments where heat dissipation is a concern.

Maximum Collector Current (IC): 0.025 A

A maximum collector current rating of 0.025 A provides suitable performance for low current applications, making it a reliable choice for small signal amplification.

Nominal Transition Frequency (fT): 3500 MHz

A high nominal transition frequency of 3500 MHz enables this transistor to operate efficiently at high frequencies, suitable for RF applications and fast switching scenarios.

Technical Specifications

Other Function Transistors BFR92AW/T3 attributes and parameters. Explore more Other Function Transistors devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

65

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

YES

Nominal Transition Frequency (fT):

Trade Compliance

BFR92AW/T3 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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