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BCW72R-TAPE-7

NXP Semiconductors

BCW72R-TAPE-7 by NXP Semiconductors

BCW72R-TAPE-7 by NXP Semiconductors is a single NPN BJT designed for surface mount applications. It features a max VCEsat of 0.25V, hFE of 200, and operates up to 150 °C, making it ideal for high-frequency circuits and signal amplification.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Digiode

USA . 3,392 parts In-Stock

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3,392

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Vyrian

USA . 359 parts In-Stock

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359

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Anansix

USA . 182 parts In-Stock

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182

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One Stop Electronics

USA . 1,467 parts In-Stock

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$55.050

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$55.050

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UNI Independent Distributors

Spain . 5,954 parts In-Stock

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Corphita

USA . 2,290 parts In-Stock

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Northwest PG Solutions

USA . 484 parts In-Stock

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484

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Native Components

USA . 311 parts In-Stock

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Overview

Unlock superior performance with the BCW72R-TAPE-7 by NXP Semiconductors, a trusted leader in innovative electronic solutions. This high-quality NPN small signal transistor delivers remarkable efficiency and reliability for diverse applications, from audio amplifiers to signal processing. Designed for space-saving surface mount technology, it ensures easy integration into your projects. Experience enhanced operation even at elevated temperatures, making it the ideal choice for demanding environments!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy provides durability and resistance to environmental stressors, making the transistor suitable for a variety of applications.

Polarity or Channel Type: NPN

NPN type transistors are widely used in amplification and switching applications, providing enhanced versatility in circuit design.

Configuration: SINGLE

Single configuration simplifies circuit layout and design, allowing for easier integration into electronic systems.

Surface Mount: YES

Surface mount capability allows for compact designs and efficient manufacturing processes, enabling high-density circuit board layouts.

Maximum VCEsat: 0.25 V

A low VCEsat ensures efficient operation with minimal voltage drop, contributing to better overall power efficiency in circuits.

Package Shape: RECTANGULAR

Rectangular package shape aids in standardization and compatibility with various PCB layouts, enhancing design flexibility.

Terminal Form: GULL WING

Gull wing terminals provide ease of soldering and better mechanical stability, ensuring reliable connections in circuit assemblies.

No. of Terminals: 3

With three terminals, this transistor can efficiently control and amplify signals within simpler designs, making it ideal for various applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style maximizes space efficiency on circuit boards, making it suitable for compact electronic devices.

Minimum DC Current Gain (hFE): 200

A high minimum DC current gain translates to better amplification capabilities, making this transistor effective in signal processing applications.

Maximum Operating Temperature: 150 °C

A high maximum operating temperature allows for reliable performance in harsh environments, broadening potential application scenarios.

Maximum Collector-Emitter Voltage: 45 V

A maximum collector-emitter voltage of 45 V provides flexibility for various application designs requiring moderate voltage handling.

Transistor Element Material: SILICON

Silicon material ensures good thermal stability and wide availability, making it a standard choice for most electronic applications.

Maximum Collector Current (IC): 0.1 A

A maximum collector current of 0.1 A makes this transistor suitable for low-power applications, providing efficient performance.

Terminal Position: DUAL

Dual terminal positioning allows for better layout options and more efficient use of PCB space.

Nominal Transition Frequency (fT): 300 MHz

A high nominal transition frequency of 300 MHz indicates excellent performance in high-frequency applications, making it ideal for RF designs.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCW72R-TAPE-7 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

200

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.25 V

Trade Compliance

BCW72R-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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