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BCV27,215

NXP Semiconductors

BCV27,215 by NXP Semiconductors

BCV27,215 by NXP Semiconductors is a NPN Darlington transistor with max VCEsat of 1V and hFE of 20,000. Ideal for amplifier applications, it has a max operating temp of 150°C and can handle up to 0.5A collector current.

Median Price

$0.083

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Chip1Stop

Japan . 4,750 parts In-Stock

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$0.259

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$0.259

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DigiKey

USA . 31 parts In-Stock

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$0.270

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$0.104

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$0.067

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31

$0.270

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$0.067

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Rochester

USA . 2,796,668 parts In-Stock

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$0.079

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$0.065

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$0.058

2,796,668

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$0.079

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$0.058

Verical

USA . 2,742,416 parts In-Stock

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$0.073

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Future Electronics

Canada . 585,000 parts In-Stock

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$0.039

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TTI

USA . 81,000 parts In-Stock

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$0.031

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Farnell

UK . 33,275 parts In-Stock

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$0.083

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$0.041

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$0.033

33,275

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$0.083

$0.041

$0.033

RS (Exports)

UK . 20,600 parts In-Stock

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$0.073

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$0.073

EBV Elektronik

Germany . 6,000 parts In-Stock

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Newark

USA . 2,325 parts In-Stock

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$0.264

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Element14

Singapore . 2,035 parts In-Stock

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$0.187

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$0.138

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$0.123

2,035

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$0.187

$0.138

$0.123

Arrow

USA . 1,750 parts In-Stock

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$0.099

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$0.062

10k+ parts

$0.041

1,750

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$0.099

$0.062

$0.041

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Digiode

USA . 4,314 parts In-Stock

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$0.028

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4,314

$0.028

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Ozdisan Elektronik

Türkiye . 6,335 parts In-Stock

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$0.035

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Nova Conductors

Japan . 92 parts In-Stock

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$0.076

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Maritex

Poland . 860 parts In-Stock

1+ parts

$0.081

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$0.043

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$0.041

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$0.037

860

$0.081

$0.043

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$0.037

Chip Stock

USA . 185,000 parts In-Stock

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IBS Electronics

USA . 12,000 parts In-Stock

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$0.188

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NAC Semi

USA . 6,000 parts In-Stock

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$0.249

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$0.249

LIBRA Elektronik GmbH

Germany . 4,919 parts In-Stock

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Vyrian

USA . 4,285 parts In-Stock

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Anansix

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VNN

France . 1,066 parts In-Stock

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NexGen Digital

USA . 1 parts In-Stock

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Semicontronic

India . 746,261 parts In-Stock

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$0.021

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746,261

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Corphita

USA . 311 parts In-Stock

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AZTECH Wire

Italy . 10,694 parts In-Stock

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Argo Parts USA

USA . 4,209 parts In-Stock

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$0.074

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Aranea Global

USA . 2,000 parts In-Stock

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Corohmni

South Africa . 403 parts In-Stock

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$0.828

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Modulus Dynamics

Lithuania . 269 parts In-Stock

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$1.269

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$1.269

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269

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Aztec Data Supply Inc.

USA . 348 parts In-Stock

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$1.524

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Perfect Parts

USA . 212,919 parts In-Stock

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Kepictronics

USA . 195,982 parts In-Stock

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Continental Prestige Electronics

USA . 145,779 parts In-Stock

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Eastek

USA . 99,000 parts In-Stock

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RC Electronics

USA . 65,000 parts In-Stock

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Authorized Procurement Solutions

USA . 25,000 parts In-Stock

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Robosynatics

Brazil . 9,677 parts In-Stock

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$0.294

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$0.288

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$0.288

9,677

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$0.288

Lucentia Tech

USA . 9,677 parts In-Stock

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$0.294

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$0.288

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$0.288

9,677

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$0.288

GreenTree Electronics

Israel . 6,445 parts In-Stock

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UNI Independent Distributors

Spain . 5,167 parts In-Stock

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Supply Digital

USA . 2,757 parts In-Stock

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A-Z Elektronik GmbH

Germany . 2,700 parts In-Stock

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Lixinc

USA . 1,971 parts In-Stock

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Overview

Discover the BCV27,215 by NXP Semiconductors, a high-quality Small Signal Bipolar Junction Transistor perfect for amplifier applications. With a maximum VCEsat of 1V and a minimum DC current gain of 20,000, this NPN Darlington transistor offers exceptional performance and reliability. Its compact rectangular package design with Gull Wing terminals makes it ideal for surface mount applications, providing customers with convenience and ease of use. Trust in NXP Semiconductors, a reputable manufacturer known for delivering cutting-edge technology and superior products. Upgrade your electronic projects with the BCV27,215 and experience enhanced efficiency and performance like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material is durable and resistant to heat, making the transistor robust and long-lasting.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are versatile in their applications.

Configuration: DARLINGTON

Darlington configuration provides high current gain, making the transistor suitable for applications where high amplification is required.

Transistor Application: AMPLIFIER

Specifically designed for amplifier applications, ensuring optimal performance in amplification circuits.

Surface Mount: YES

Surface mount capability allows for easy and efficient PCB assembly, saving time and reducing production costs.

Maximum VCEsat: 1 V

Low VCEsat value indicates minimal voltage drop across the collector-emitter junction, resulting in efficient operation.

Package Shape: RECTANGULAR

Rectangular package shape allows for easy placement and soldering on the PCB, simplifying the assembly process.

No. of Terminals: 3

Having 3 terminals ensures proper connectivity and integration with other components in the circuit.

Maximum Power Dissipation (Abs): 0.25 W

High power dissipation capability allows the transistor to handle significant power loads without overheating.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and is ideal for compact electronic devices.

Minimum DC Current Gain (hFE): 20000

High DC current gain indicates strong amplification capability, ensuring accurate signal amplification.

Maximum Operating Temperature: 150 °C

High maximum operating temperature range ensures reliable performance even in challenging environmental conditions.

Maximum Collector-Emitter Voltage: 30 V

30V maximum collector-emitter voltage allows for safe operation within specified voltage limits.

Transistor Element Material: SILICON

Silicon material offers excellent semiconductor properties, ensuring efficient and reliable transistor operation.

Maximum Collector Current (IC): 0.5 A

0.5A maximum collector current rating enables the transistor to handle moderate current loads with ease.

Terminal Finish: TIN

Tin terminal finish offers good solderability and corrosion resistance, ensuring reliable electrical connections.

Terminal Position: DUAL

Dual terminal position provides flexibility in PCB layout and component placement for easy integration.

Maximum Time At Peak Reflow Temperature (s): 30

30-second maximum time at peak reflow temperature ensures proper solder reflow during assembly.

Peak Reflow Temperature °C: 260

260°C peak reflow temperature ensures reliable soldering and component bonding during PCB assembly.

Nominal Transition Frequency (fT): 220 MHz

High nominal transition frequency indicates fast switching speed and high-frequency operation for signal processing applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BCV27,215 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

30 V

Configuration:

Minimum DC Current Gain (hFE):

20000

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1 V

Trade Compliance

BCV27,215 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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