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BC857W,135

NXP Semiconductors

BC857W,135 by NXP Semiconductors

BC857W,135 by NXP Semiconductors is a PNP BJT transistor for switching applications. It has a max VCEsat of 0.65V and min DC current gain of 125. With a max operating temperature of 150°C, it is ideal for small outline surface mount packages in electronic circuits.

Median Price

$0.090

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey

USA . 6,950 parts In-Stock

1+ parts

$0.150

100+ parts

$0.057

1k+ parts

$0.036

10k+ parts

$0.020

6,950

$0.150

$0.057

$0.036

$0.020

Mouser Electronics

USA . 6,033 parts In-Stock

1+ parts

$0.150

100+ parts

$0.057

1k+ parts

$0.032

10k+ parts

$0.025

6,033

$0.150

$0.057

$0.032

$0.025

Rochester

USA . 1,230,000 parts In-Stock

1+ parts

-

100+ parts

$0.029

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$0.024

10k+ parts

$0.021

1,230,000

-

$0.029

$0.024

$0.021

Verical

USA . 640,000 parts In-Stock

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640,000

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Future Electronics

Canada . 60,000 parts In-Stock

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$0.009

60,000

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$0.009

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Digiode

USA . 3,716 parts In-Stock

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$0.021

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-

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3,716

$0.021

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Nova Conductors

Japan . 49 parts In-Stock

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$0.031

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49

$0.031

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DigiKey Marketplace

USA . 1,230,000 parts In-Stock

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$0.020

1,230,000

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$0.020

Chip Stock

USA . 175,000 parts In-Stock

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175,000

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IBS Electronics

USA . 70,000 parts In-Stock

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$0.013

70,000

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$0.013

NAC Semi

USA . 50,000 parts In-Stock

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Vyrian

USA . 5,290 parts In-Stock

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VNN

France . 1,522 parts In-Stock

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Anansix

USA . 727 parts In-Stock

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727

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Ampacity Inc.

Singapore . 546,482 parts In-Stock

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$0.010

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Corphita

USA . 1,747 parts In-Stock

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Component Stockers USA

USA . 303,650 parts In-Stock

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$0.020

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$0.020

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$0.010

303,650

$0.020

$0.020

$0.020

$0.010

AZTECH Wire

Italy . 7,782 parts In-Stock

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$0.080

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7,782

$0.080

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Continental Prestige Electronics

USA . 50,000 parts In-Stock

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$0.016

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$0.016

QUARKTWIN TECHNOLOGY LTD

USA . 29,691 parts In-Stock

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Kepictronics

USA . 9,980 parts In-Stock

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UNI Independent Distributors

Spain . 5,059 parts In-Stock

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Supply Digital

USA . 1,995 parts In-Stock

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Netroflash

USA . 500 parts In-Stock

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$0.030

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$0.029

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$0.029

500

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$0.030

$0.029

$0.029

Overview

Discover the BC857W,135 by NXP Semiconductors, a top-quality Small Signal Bipolar Junction Transistor perfect for switching applications. With its PNP polarity and single configuration, this transistor offers reliable performance in a compact package. Designed with a maximum VCEsat of 0.65V and a minimum DC Current Gain (hFE) of 125, this transistor ensures efficient power dissipation and optimal collector current. Whether you're looking to enhance your electronic projects or streamline your circuit designs, the BC857W,135 delivers exceptional value and performance that exceeds expectations. Experience the difference with NXP Semiconductors' cutting-edge technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes this transistor lightweight and cost-effective.

Polarity or Channel Type: PNP

PNP configuration allows for high current flow and efficient switching operation.

Configuration: SINGLE

Single configuration simplifies circuit design and assembly process.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Surface Mount: YES

Surface mount capability enables easy integration onto circuit boards.

Maximum VCEsat: 0.65 V

Low VCEsat of 0.65 V reduces power dissipation and increases efficiency.

Package Shape: RECTANGULAR

Rectangular shape provides easy placement on circuit boards for space-saving layouts.

Terminal Form: GULL WING

Gull wing terminals offer strong mechanical stability for reliable connections.

No. of Terminals: 3

Three terminals simplify circuit connections for ease of use.

Maximum Power Dissipation (Abs): 0.2 W

With a maximum power dissipation of 0.2W, this transistor can handle high power loads.

Package Style (Meter): SMALL OUTLINE

Small outline package style minimizes space requirements and improves thermal performance.

Minimum DC Current Gain (hFE): 125

High minimum DC current gain ensures stable and consistent amplification.

Maximum Operating Temperature: 150 °C

Ability to operate at high temperatures ensures reliability in various environments.

Maximum Collector-Base Capacitance: 5 pF

Low collector-base capacitance minimizes signal distortion for better performance.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating allows for versatility in various applications.

Transistor Element Material: SILICON

Silicon material provides stable operation and long-term reliability.

Maximum Collector Current (IC): 0.1 A

Adequate collector current rating allows for handling of moderate power levels.

Terminal Finish: TIN

Tin terminal finish ensures good solderability and corrosion resistance.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit connectivity for different applications.

Maximum Time At Peak Reflow Temperature (s): 30

Capable of withstanding peak reflow temperatures for a short duration, ensuring robust manufacturing processes.

Peak Reflow Temperature °C: 260

High peak reflow temperature tolerance ensures compatibility with industry-standard soldering processes.

Nominal Transition Frequency (fT): 100 MHz

High transition frequency of 100 MHz enables fast signal switching and amplification.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC857W,135 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from NXP Semiconductors

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

5 pF

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

125

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

PNP

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.65 V

Trade Compliance

BC857W,135 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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