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BAS516T/R

NXP Semiconductors

BAS516T/R by NXP Semiconductors

BAS516T/R by NXP Semiconductors is a single rectifier diode with a max forward voltage of 1.25V and output current of 0.25A. It has a small outline package style, operates at up to 150°C, and is ideal for applications requiring fast reverse recovery time such as power supplies and voltage converters.

Median Price

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Lifecycle Status

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13

In-Stock Inventory

1k+

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Chip Stock

USA . 151,220 parts In-Stock

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Digiode

USA . 4,892 parts In-Stock

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Prism Electronics

USA . 3,436 parts In-Stock

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VNN

France . 3,114 parts In-Stock

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Extreme Components

USA . 3,000 parts In-Stock

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QIE Inc.

USA . 2,800 parts In-Stock

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North Shore Components

USA . 2,689 parts In-Stock

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PC Components Company LLC

USA . 2,590 parts In-Stock

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Bristol Electronics

USA . 2,590 parts In-Stock

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Vyrian

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Anansix

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ACDS - Activité Composants Distribution Service

France . 490 parts In-Stock

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Nova Conductors

Japan . 75 parts In-Stock

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Ampacity Inc.

Singapore . 1,398 parts In-Stock

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One Stop Electronics

USA . 1,648 parts In-Stock

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AZTECH Wire

Italy . 545 parts In-Stock

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Perfect Parts

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Metaverse IC Inc.

Canada . 5,000 parts In-Stock

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UNI Independent Distributors

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Corphita

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Cyclops Electronics Ltd (Excess)

UK . 490 parts In-Stock

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Bastille Electronics

Australia . 450 parts In-Stock

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Glotronic Ltd.

UK . 392 parts In-Stock

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Overview

Unleash the power of the BAS516T/R diode by NXP Semiconductors! Crafted with precision and expertise, this small outline rectifier diode offers unparalleled quality and reliability. Ideal for a wide range of applications, from power supplies to signal processing, this diode ensures efficient performance and durability. Say goodbye to voltage fluctuations and hello to seamless functionality with the BAS516T/R. Trust NXP Semiconductors to deliver excellence in every component.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material provides durability and protection for the diode, making it suitable for various applications.

Surface Mount: YES

Being surface mountable allows for easier and more efficient installation on PCBs, saving space and enabling automated assembly processes.

Maximum Reverse Recovery Time: 0.004 us

With a fast reverse recovery time, this diode ensures minimal power loss and improved efficiency in rectification circuits.

Maximum Operating Temperature: 150 °C

The high operating temperature range makes this diode suitable for use in demanding environments without compromising performance.

Maximum Power Dissipation: 0.5 W

With a high power dissipation capability, this diode can handle higher power levels without overheating, ensuring reliability in operation.

Maximum Forward Voltage (VF): 1.25 V

The low forward voltage drop of 1.25 V ensures efficient energy conversion and minimal voltage loss across the diode during forward conduction.

Technical Specifications

Diodes & Rectifiers BAS516T/R attributes and parameters. Explore more Diodes & Rectifiers devices from NXP Semiconductors

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.25 V

JESD-30 Code:

R-PDSO-F2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

4 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Maximum Output Current:

.25 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.5 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

85 V

Maximum Reverse Recovery Time:

.004 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

BAS516T/R Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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