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BAS521LP-7

Diodes Incorporated

BAS521LP-7 by Diodes Incorporated

BAS521LP-7 by Diodes Inc. is a single rectifier diode with a max forward voltage of 1.1V and output current of 0.4A, suitable for applications requiring fast reverse recovery time (0.05us) in a chip carrier package style. With a max repetitive peak reverse voltage of 325V, it is ideal for use in electronics operating at temperatures as low as -65°C.

Median Price

$0.120

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 500 parts In-Stock

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$0.120

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500

$0.120

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Vyrian

USA . 8,754 parts In-Stock

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8,754

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Sensible Micro Corp

USA . 7,423 parts In-Stock

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7,423

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Chip Stock

USA . 2,714 parts In-Stock

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2,714

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ACDS - Activité Composants Distribution Service

France . 2,333 parts In-Stock

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2,333

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VNN

France . 866 parts In-Stock

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866

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Distributors (Availability)

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Semicontronic

India . 1,324 parts In-Stock

1+ parts

$0.010

100+ parts

$0.010

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$0.010

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-

1,324

$0.010

$0.010

$0.010

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Argo Parts USA

USA . 3,495 parts In-Stock

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$0.102

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$0.099

3,495

$0.102

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$0.099

Continental Prestige Electronics

USA . 177 parts In-Stock

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$0.102

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$0.100

177

$0.102

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Netroflash

USA . 2,000 parts In-Stock

1+ parts

$0.120

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$0.114

10k+ parts

$0.112

2,000

$0.120

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$0.114

$0.112

Corohmni

South Africa . 174 parts In-Stock

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$0.129

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174

$0.129

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Advanced Electronics

New Zealand . 50 parts In-Stock

1+ parts

$0.131

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$0.124

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$0.124

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50

$0.131

$0.124

$0.124

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Aztec Data Supply Inc.

USA . 3,476 parts In-Stock

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$0.160

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$0.160

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Ampacity Inc.

Singapore . 1,120 parts In-Stock

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$3.010

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$3.010

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AZTECH Wire

Italy . 547 parts In-Stock

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$17.531

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547

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Perfect Parts

USA . 52,865 parts In-Stock

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Kepictronics

USA . 29,928 parts In-Stock

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Lixinc

USA . 6,767 parts In-Stock

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Glotronic Ltd.

UK . 3,790 parts In-Stock

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Speed Components Ltd (Excess)

Israel . 3,000 parts In-Stock

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3,000

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Cyclops Electronics Ltd (Excess)

UK . 2,333 parts In-Stock

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2,333

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iodParts Technologies Inc.

India . 10 parts In-Stock

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Overview

Unlock the power of innovation with the BAS521LP-7 by Diodes Incorporated. As a leading manufacturer in the Diodes & Rectifiers category, Diodes Incorporated delivers top-quality products that exceed industry standards. The BAS521LP-7 offers customers unparalleled value, benefits, and advantages for their applications. With a fast reverse recovery time and high output current capacity, this rectifier diode is perfect for a wide range of electronic devices. Trust Diodes Incorporated to provide reliable solutions for all your engineering needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

PLASTIC/EPOXY material provides good physical and environmental protection, making the diode durable and reliable for long-term use.

Maximum Reverse Recovery Time: 0.05 us

The fast reverse recovery time of 0.05 us ensures efficient operation and responsiveness in switching applications.

Minimum Operating Temperature: -65 °C

With a minimum operating temperature of -65 °C, this diode can perform well in a wide range of temperature conditions.

Maximum Power Dissipation: 0.4 W

The low power dissipation of 0.4 W helps in reducing heat generation and energy wastage, making the diode energy-efficient.

Diode Type: RECTIFIER DIODE

Being a rectifier diode, this product is suitable for converting AC to DC, making it ideal for power supply and rectification applications.

Maximum Forward Voltage (VF): 1.1 V

The low forward voltage of 1.1 V minimizes power loss and voltage drop across the diode, ensuring efficient energy conversion.

Maximum Output Current: 0.4 A

With a maximum output current of 0.4 A, this diode can handle moderate current loads while maintaining stable operation.

Maximum Repetitive Peak Reverse Voltage: 325 V

The high repetitive peak reverse voltage of 325 V allows the diode to withstand reverse voltage spikes and surges, ensuring reliable performance.

Technical Specifications

Diodes & Rectifiers BAS521LP-7 attributes and parameters. Explore more Diodes & Rectifiers devices from Diodes Incorporated

Specs

Config:

SINGLE

Diode Element Material:

SILICON

Diode Type:

Maximum Forward Voltage (VF):

1.1 V

JESD-30 Code:

R-PBCC-N2

JESD-609 Code:

e4

Moisture Sensitivity Level (MSL):

1

Maximum Non Repetitive Peak Forward Current:

8 A

No. of Elements:

1

No. of Phases:

1

No. of Terminals:

2

Minimum Operating Temperature:

-65 Cel

Maximum Output Current:

.4 A

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CHIP CARRIER

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Maximum Repetitive Peak Reverse Voltage:

325 V

Maximum Reverse Recovery Time:

.05 us

Sub-Category:

Rectifier Diodes

Surface Mount:

YES

Terminal Finish:

NICKEL PALLADIUM GOLD

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAS521LP-7 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.70

SB

8541.10.00.70

PCN

Manufacturer Highlights

Diodes Incorporated

Diodes Incorporated is an international leader in the design and production of high-grade application specific standard products utilized in a wide variety of industries. The company has developed cutting-edge technology that enhances the performance and reliability of components for consumer, industrial, automotive and communication applications. Established in 1959, Diodes Incorporated has been providing superior services to its customers by creating innovative solutions from their world-class manufacturing centers located around the world. Their commitment to delivering quality products extends to their selection of materials which are carefully chosen to meet the demand of both commercial and military requirements.

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Management team

Chairman and CEO

Keh-Shew Lu 

CFO

Brett R. Whitmire 

Lead Director

Angie Chen Button

Manufacturer fab locations 11

Fab name Location Fab Initiation Wafer Capacity

Fab 1

Fabrication

Fab Initiation

1987

China

Shanghai

Wafer Capacity

40,000

1987

40,000

Zizhu Fab 1

Fabrication

Fab Initiation

2013

China

Shanghai

Wafer Capacity

18,500

2013

18,500

G Fab

Fabrication

Fab Initiation

2008

UK

Greenock

Wafer Capacity

8,000

2008

8,000

Keelung Fab

Fabrication

Fab Initiation

1990

Taiwan

Keelung

Wafer Capacity

58,000

1990

58,000

Wuxi Fab

Fabrication

Fab Initiation

2004

China

Wuxi

Wafer Capacity

190,000

2004

190,000

Shanghai Fab

Fabrication

Fab Initiation

1993

China

Shanghai

Wafer Capacity

110,000

1993

110,000

G Fab

Fabrication

Fab Initiation

1970

UK

Greenock

Wafer Capacity

22,000

1970

22,000

Hsinchu Fab

Fabrication

Fab Initiation

1998

Taiwan

Hsinchu

Wafer Capacity

38,000

1998

38,000

Fab 2

Fabrication

Fab Initiation

2003

China

Shanghai

Wafer Capacity

20,000

2003

20,000

SPFAB

Fabrication

Fab Initiation

1995

USA

South Portland

Wafer Capacity

17,000

1995

17,000

N/A

Fabrication

Fab Initiation

1982

UK

Oldham

Wafer Capacity

4,000

1982

4,000

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