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BAP70AM/A2,115

NXP Semiconductors

BAP70AM/A2,115 by NXP Semiconductors

BAP70AM/A2,115 by NXP Semiconductors is a surface mount diode ideal for high-temperature applications. It features a max reverse current of 0.1 µA, operates b/w -65 °C to 150 °C, and supports up to 50 V reverse voltage. Perfect for signal processing and switching tasks.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,299 parts In-Stock

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Anansix

USA . 1,276 parts In-Stock

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Digiode

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978

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One Stop Electronics

USA . 1,238 parts In-Stock

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$0.010

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Northwest PG Solutions

USA . 2,056 parts In-Stock

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$2.833

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UNI Independent Distributors

Spain . 7,850 parts In-Stock

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Corphita

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Native Components

USA . 920 parts In-Stock

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Overview

Elevate your designs with the BAP70AM/A2,115 from NXP Semiconductors—a trusted name in innovation. This high-quality surface mount diode offers exceptional reliability across diverse applications, from automotive to industrial. With its robust temperature range and minimal reverse current, you can count on consistent performance even in demanding environments. Experience the unparalleled benefits of NXP’s expertise, ensuring your projects thrive with efficiency and durability.

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easy integration into modern electronics and helps save space on PCBs.

Maximum Reverse Current: 0.1 µA

A low reverse current indicates minimal leakage, improving overall energy efficiency and performance.

Reverse Test Voltage: 50 V

With a reverse test voltage of 50 V, this diode can withstand high reverse voltages, enhancing its reliability.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures makes this diode suitable for harsh environments and demanding applications.

Minimum Operating Temperature: -65 °C

The wide temperature range ensures reliable performance in extreme cold, making it versatile for various applications.

Maximum Power Dissipation: 0.3 W

A maximum power dissipation of 0.3 W allows for effective heat management within circuitry, preventing overheating.

Maximum Forward Voltage (VF): 1.1 V

A low forward voltage drop contributes to higher efficiency and reduced power loss during operation.

Maximum Repetitive Peak Reverse Voltage: 50 V

This high peak reverse voltage rating ensures that the diode can handle sudden voltage spikes without failure.

Technical Specifications

Other Function Diodes BAP70AM/A2,115 attributes and parameters. Explore more Other Function Diodes devices from NXP Semiconductors

Specs

Maximum Forward Voltage (VF):

1.1 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Power Dissipation:

.3 W

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

50 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

BAP70AM/A2,115 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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