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BAP70AM/A2,135

NXP Semiconductors

BAP70AM/A2,135 by NXP Semiconductors

BAP70AM/A2,135 by NXP Semiconductors is a surface mount diode ideal for high-temperature applications. It features a max reverse current of 0.1 µA, operates b/w -65 °C to 150 °C, and supports up to 50 V reverse voltage. This diode is perfect for signal processing in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 4,446 parts In-Stock

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Vyrian

USA . 4,221 parts In-Stock

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Anansix

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One Stop Electronics

USA . 987 parts In-Stock

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UNI Independent Distributors

Spain . 3,324 parts In-Stock

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Corphita

USA . 1,872 parts In-Stock

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Northwest PG Solutions

USA . 1,639 parts In-Stock

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Native Components

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Overview

Unlock superior performance with the BAP70AM/A2,135 from NXP Semiconductors! This exceptional diode combines reliability and efficiency, making it perfect for a wide range of applications in consumer electronics, automotive, and industrial sectors. Designed to thrive in extreme conditions, its robust characteristics ensure long-lasting durability and minimal energy loss. Elevate your projects with the quality and innovation that only NXP can deliver!

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easy integration in compact applications, saving board space and simplifying assembly.

Maximum Reverse Current: 0.1 uA

A low maximum reverse current indicates minimal leakage, making this diode energy-efficient and suitable for sensitive applications.

Reverse Test Voltage: 50 V

With a high reverse test voltage, this diode can handle significant reverse stress, providing reliability in high-voltage applications.

Maximum Operating Temperature: 150 °C

The ability to operate at high temperatures expands the diode's usability in demanding environments without compromising performance.

Minimum Operating Temperature: -65 °C

Operational capability at low temperatures ensures reliable performance in extreme cold conditions, ideal for aerospace and military applications.

Maximum Power Dissipation: 0.3 W

A moderate power dissipation level allows for effective thermal management in circuits, contributing to overall system reliability.

Maximum Forward Voltage (VF): 1.1 V

A low forward voltage drop increases efficiency, reducing power loss during operation and improving overall energy management.

Maximum Repetitive Peak Reverse Voltage: 50 V

The capability of handling repetitive peak reverse voltage indicates resilience against voltage spikes, enhancing the diode's durability in fluctuating conditions.

Technical Specifications

Other Function Diodes BAP70AM/A2,135 attributes and parameters. Explore more Other Function Diodes devices from NXP Semiconductors

Specs

Maximum Forward Voltage (VF):

1.1 V

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Maximum Power Dissipation:

.3 W

Maximum Repetitive Peak Reverse Voltage:

50 V

Maximum Reverse Current:

.1 uA

Reverse Test Voltage:

50 V

Sub-Category:

Other Diodes

Surface Mount:

YES

Trade Compliance

BAP70AM/A2,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

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