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74LVC1G06GW,165

NXP Semiconductors

74LVC1G06GW,165 by NXP Semiconductors

NXP Semiconductors' 74LVC1G06GW,165 is a CMOS Logic Gate with 5 terminals. It operates at a supply voltage range of 1.65V to 5.5V and has a max output current of 24A. With an open-drain output characteristic, it finds application in automotive temperature grade environments for fast signal propagation at 8.5ns delay.

Median Price

$0.498

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

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Chip1Stop

Japan . 9 parts In-Stock

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Nova Conductors

Japan . 100 parts In-Stock

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Chip Stock

USA . 137,000 parts In-Stock

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Vyrian

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Digiode

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Aranea Global

USA . 100 parts In-Stock

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$0.488

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$0.469

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AZTECH Wire

Italy . 806 parts In-Stock

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UNI Independent Distributors

Spain . 6,154 parts In-Stock

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iodParts Technologies Inc.

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Microchip USA

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Overview

Unlock the potential of your electronic designs with the 74LVC1G06GW,165 by NXP Semiconductors. This high-quality logic gate offers reliable performance and precision engineering, making it a top choice for a wide range of applications. From automotive to industrial settings, this compact and versatile component delivers unparalleled value, efficiency, and reliability. Trust NXP Semiconductors to provide cutting-edge solutions that meet your needs and exceed your expectations. Elevate your projects with the 74LVC1G06GW,165 and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight, durable, and cost-effective.

Surface Mount: YES

The surface mount feature allows for easy and efficient installation on circuit boards.

Nominal Supply Voltage / Vsup (V): 1.8

The low nominal supply voltage of 1.8V helps in reducing power consumption and heat generation.

Propagation Delay (tpd): 8.5 ns

The low propagation delay of 8.5 ns ensures fast signal processing and high-speed operation.

Output Characteristics: OPEN-DRAIN

The open-drain output characteristics offer flexibility in connecting to other components in the circuit.

Temperature Grade: AUTOMOTIVE

The automotive-grade temperature range ensures reliable operation in harsh environmental conditions.

Technology: CMOS

The CMOS technology delivers high performance, low power consumption, and compatibility with various logic levels.

Technical Specifications

Logic Gates 74LVC1G06GW,165 attributes and parameters. Explore more Logic Gates devices from NXP Semiconductors

Specs

Family:

LVC/LCX/Z

JESD-30 Code:

R-PDSO-G5

JESD-609 Code:

e3

Length:

2.05 mm

Logic IC Type:

Maximum I (ol):

24 Amp

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Inputs:

1

No. of Terminals:

5

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Output Characteristics:

OPEN-DRAIN

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP5/6,.08

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Packing Method:

TR

Power Supplies (V):

3.3

Propagation Delay (tpd):

8.5 ns

Qualification:

Not Qualified

Schmitt Trigger:

NO

Maximum Seated Height:

1.1 mm

Sub-Category:

Gates

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

1.65 V

Nominal Supply Voltage / Vsup (V):

1.8

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

TIN

Terminal Form:

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Width:

1.25 mm

Trade Compliance

74LVC1G06GW,165 Logic ICs trade compliance attributes, and parameters.

HTS

8542.39.00.01

SB

8542.39.00.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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