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BLF146

North American Philips Discrete Products Div

BLF146 by North American Philips Discrete Products Div

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 130 W; Maximum Drain Current (ID): 7 A; Maximum Operating Temperature: 200 Cel;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) BLF146 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from North American Philips Discrete Products Div

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

7 A

Maximum Drain Current (ID):

7 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

200 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Trade Compliance

BLF146 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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