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PQMD10,147

Nexperia

PQMD10,147 by Nexperia

Nexperia's PQMD10,147 is a Small Signal BJT with NPN and PNP channels. It features 2 elements with built-in resistors for switching applications. With a max collector-emitter voltage of 50V and fT of 230MHz, it's ideal for compact outline designs in automotive electronics.

Median Price

$0.081

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 13,699 parts In-Stock

1+ parts

-

100+ parts

$0.081

1k+ parts

$0.067

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$0.060

13,699

-

$0.081

$0.067

$0.060

DigiKey

USA . 13,699 parts In-Stock

1+ parts

-

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$0.100

13,699

-

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$0.100

Verical

USA . 10,000 parts In-Stock

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$0.075

10,000

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$0.075

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

DigiKey Marketplace

USA . 13,699 parts In-Stock

1+ parts

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13,699

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Vyrian

USA . 3,956 parts In-Stock

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3,956

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Distributors (Availability)

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AZTECH Wire

Italy . 11,838 parts In-Stock

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$0.040

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11,838

$0.040

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Continental Prestige Electronics

USA . 13,699 parts In-Stock

1+ parts

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$0.041

13,699

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$0.041

Supply Digital

USA . 1,922 parts In-Stock

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1,922

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Overview

Enhance your electronic projects with the PQMD10,147 by Nexperia. Crafted with precision and quality by Nexperia, this Small Signal Bipolar Junction Transistor (BJT) offers NPN and PNP configurations with built-in resistors for seamless switching applications. With a compact rectangular package style and no-lead terminals, this transistor provides convenience and reliability. Trust Nexperia for top-notch performance and efficiency in all your circuit designs. Elevate your creations with the PQMD10,147 today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good insulation and durability for the transistor.

Polarity or Channel Type: NPN AND PNP

Having both NPN and PNP types allows for versatile use in different circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

The built-in resistor simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in such circuits.

Surface Mount: YES

Surface mount design allows for easy and efficient PCB assembly.

Package Shape: RECTANGULAR

Rectangular shape fits well in modern PCB layouts, optimizing space usage.

No. of Elements: 2

Having 2 elements provides flexibility in circuit design and allows for more functionality.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures stable and consistent performance in various operating conditions.

Maximum Collector-Emitter Voltage: 50 V

With a maximum voltage rating of 50V, this transistor can be used in a variety of low to medium voltage applications.

Transistor Element Material: SILICON

Silicon material offers excellent electrical properties and reliability for the transistor.

Maximum Collector Current (IC): 0.1 A

With a maximum collector current of 0.1A, this transistor is suitable for low power applications.

Terminal Finish: TIN

Tin finish provides good conductivity and solderability for easy assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature allows for reliable solder connections during assembly.

Reference Standard: AEC-Q101; IEC-60134

Compliance with industry standards ensures quality and reliability of the transistor.

Nominal Transition Frequency (fT): 230 MHz

High nominal transition frequency makes this transistor suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PQMD10,147 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 21

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PQMD10,147 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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