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PQMD10Z

Nexperia

PQMD10Z by Nexperia

PQMD10Z by Nexperia is a Small Signal BJT with NPN and PNP types. It features 2 elements with built-in resistor, suitable for switching applications. With a max voltage of 50V, max current of 0.1A, and fT of 230MHz, it's ideal for compact designs requiring high-speed performance.

Median Price

$0.059

Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 14,875 parts In-Stock

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$0.046

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$0.038

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$0.034

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$0.046

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$0.034

Chip1Stop

Japan . 190 parts In-Stock

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$0.072

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190

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$0.072

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Chip Stock

USA . 70,000 parts In-Stock

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Vyrian

USA . 8,896 parts In-Stock

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AZTECH Wire

Italy . 9,191 parts In-Stock

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$0.180

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$0.180

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Eastek

USA . 15,000 parts In-Stock

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GreenTree Electronics

Israel . 15,000 parts In-Stock

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Continental Prestige Electronics

USA . 14,875 parts In-Stock

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$0.043

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14,875

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$0.043

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Andel Nordic

Denmark . 2,039 parts In-Stock

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Authorized Procurement Solutions

USA . 2,000 parts In-Stock

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Supply Digital

USA . 1,055 parts In-Stock

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Overview

Discover the Nexperia PQMD10Z, a top-quality Small Signal Bipolar Junction Transistor designed for switching applications. With its NPN and PNP polarity options, this component offers flexibility and efficiency in circuit design. Featuring a compact rectangular package with built-in resistors, the PQMD10Z is perfect for surface mount applications. Trust in Nexperia's reputation for reliability and innovation to deliver superior performance. Enhance your electronics projects with the PQMD10Z and experience seamless functionality and precision like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the components inside, ensuring a longer lifespan for the transistor.

Polarity or Channel Type: NPN AND PNP

The availability of both NPN and PNP types allows for versatile use in various circuit configurations.

Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR

This configuration with built-in resistors simplifies circuit design and saves space on the PCB.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance in on/off states.

Surface Mount: YES

Surface mount capability makes installation easier and more efficient in modern electronic devices.

Minimum DC Current Gain (hFE): 100

With a high minimum DC current gain, this transistor provides consistent and predictable amplification of signals.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for use in a wide range of voltage applications.

Transistor Element Material: SILICON

Silicon is a reliable and widely-used semiconductor material, offering stable performance over time.

Peak Reflow Temperature: 260C

With a high peak reflow temperature, this transistor can withstand high-temperature soldering processes during manufacturing.

Nominal Transition Frequency (fT): 230 MHz

The high nominal transition frequency indicates fast switching speeds, suitable for high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) PQMD10Z attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nexperia

Specs

Additional Features:

BUILT IN BIAS RESISTANCE RATIO IS 21

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

100

JESD-30 Code:

R-PDSO-N6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Reference Standard:

AEC-Q101; IEC-60134

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

PQMD10Z Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Nexperia

Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.

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Management team

CEO

Xuezheng Zhang (Wing)

CFO

Stefan Tilger

COO

Achim Kempe

Manufacturer fab locations 5

Fab name Location Fab Initiation Wafer Capacity

Hamburg

Fabrication

Fab Initiation

1981

Germany

Hamburg

Wafer Capacity

36,000

1981

36,000

Manchester (8-inch line)

Fabrication

Fab Initiation

2017

Australia

Hazelgrove

Wafer Capacity

12,000

2017

12,000

Manchester (6-inch line)

Fabrication

Fab Initiation

1998

Australia

Hazelgrove

Wafer Capacity

22,000

1998

22,000

Shanghai Fab

Fabrication

Fab Initiation

2022

China

Shanghai

Wafer Capacity

2022

Nexperia Newport

Fabrication

Fab Initiation

1998

UK

Newport

Wafer Capacity

34,000

1998

34,000

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