Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Featured manufacturers
Power Field-Effect Transistors;
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Vyrian
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AZTECH Wire
$4.950
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Northwest PG Solutions
Native Components
GAN039-650NTBA Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
Founded in 2017, Nexperia is a leading provider of semiconductors, based out of Nijmegen, the Netherlands. It is owned by the partially state-owned Chinese company Wingtech Technology. With factories in Hamburg, Germany and Greater Manchester, England, Nexperia is able to provide its clients with high quality semiconductor products quickly and efficiently.On November 8, 2023, Vishay and Nexperia BV announced that they have entered into an agreement whereby Vishay will acquire Nexperia’s wafer fabrication facility and operations located in Newport, South Wales, U.K. for approximately $177,000 in cash, subject to customary post-closing adjustments. On November 8, 2023, Vishay remitted $8,750 to an escrow account as a deposit for the acquisition. Such amount is included within "Purchase of and deposits for businesses, net of cash acquired" on the consolidated statement of cash flows. To effect the transaction, Vishay will acquire a 100% interest in the legal entity Neptune 6 Limited, and its wholly-owned operating subsidiary, Nexperia Newport Limited, which owns and operates the Newport facility. The closing of the transaction is subject to U.K. government review and customary closing conditions, and is expected to occur in the first quarter of 2024.
CEO
Xuezheng Zhang (Wing)
CFO
Stefan Tilger
COO
Achim Kempe
Hamburg
Fabrication
Fab Initiation
1981
Germany
Wafer Capacity
36,000
Manchester (8-inch line)
2017
Australia
Hazelgrove
12,000
Manchester (6-inch line)
1998
22,000
Shanghai Fab
2022
China
Shanghai
Nexperia Newport
UK
Newport
34,000
2N2222A
Boca Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
LM358N
Freescale Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
1N4148WS
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
BAV99
Philips Semiconductors
RECTIFIER DIODE; Surface Mount: YES; Maximum Output Current: .1 A; Peak Reflow Temperature (C): 260; Terminal Finish: MATTE TIN; Maximum Reverse Recovery Time: .006 us;
Vishay Telefunken
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
2N7002
Siliconix
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Drain Current (ID): .115 A; Operating Mode: ENHANCEMENT MODE;
Diotec Semiconductor Ag
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .6 A; Maximum Time At Peak Reflow Temperature (s): 10;
Promax-johnton
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Semiconductors
RECTIFIER DIODE; Surface Mount: NO; Maximum Output Current: .15 A; Maximum Forward Voltage (VF): 1 V; Maximum Operating Temperature: 200 Cel; No. of Elements: 1;
M85049/85-08W02
Glenair
CONNECTOR ACCESSORY; MIL Conformity: YES; Material: ALUMINIUM ALLOY; Associated Backshell Military - Specifications: MIL-DTL-38999; Shell Sizes: 08; DIN Conformity: NO;
ULN2803ADWRG4
Texas Instruments
ULN2803ADWRG4 by Texas Instruments is a peripheral driver with 8 functions, open-collector output, and built-in transient protection. It operates b/w -40 to 85 °C with a max supply voltage of 3 V. Ideal for applications requiring sink current flow direction in a small outline package style.
ULN2803A
YOUTAI SEMICONDUCTOR CO LTD
BUFFER OR INVERTER BASED PERIPHERAL DRIVER; Terminal Form: GULL WING; No. of Terminals: 18; Package Code: SOP; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G18;
SS14
Surge Components
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
SN65HVD234DR
SN65HVD234DR by Texas Instruments is an 8-terminal interface circuit with a data rate of 1 Mbps. Operating temperature ranges from -40 to 125 °C, making it ideal for automotive applications. With a supply voltage of 3.3 V and low current draw of 6 mA, it's suitable for network interfaces in compact designs.
LL4148
Rectron
RECTIFIER DIODE; Terminal Position: END; Terminal Form: WRAP AROUND; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
350766-1
TE Connectivity
TE Connectivity 350766-1 is a rectangular power connector with 0.25" mating contact pitch, rated for 600V and operating temperatures from -55 to 105°C. It has a durable design with POLYAMIDE insulator material, suitable for commercial applications requiring secure crimp termination in cable mounting setups.
SMBJ18CA
Forward International Electronics
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Nominal Breakdown Voltage: 21.05 V; Maximum Clamping Voltage: 29.2 V; Maximum Repetitive Peak Reverse Voltage: 18 V; Polarity: BIDIRECTIONAL;
MMBF170LT1G
Rochester Electronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Style (Meter): SMALL OUTLINE; No. of Terminals: 3;
Kingwell Technonlogy
Vicor
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
IPZ40N04S5L4R8ATMA1
Infineon Technologies
Infineon's IPZ40N04S5L4R8ATMA1 is a N-CHANNEL FET with 40V DS Breakdown Voltage, 160A IDM, and 0.0067 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance.
IRF640PBF
Vishay Siliconix
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; JEDEC-95 Code: TO-220AB; Package Body Material: PLASTIC/EPOXY; Qualification: Not Qualified;
IRFR9024PBF
Vishay Intertechnology
Vishay Intertechnology's IRFR9024PBF is a P-CHANNEL FET with 60V DS Breakdown Voltage and 8.8A Drain Current. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE with 0.28 ohm On Resistance. Suitable for high-power circuits, it has a max power dissipation of 42W and can withstand temperatures from -55 to 150°C.
IRFP460LC
International Rectifier
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 280 W; Package Style (Meter): FLANGE MOUNT; Peak Reflow Temperature (C): 225;
FDMS86350ET80
Onsemi
The Onsemi FDMS86350ET80 is a N-CHANNEL Power FET with 80V DS Breakdown Voltage and 693A IDM. Ideal for SWITCHING applications, it features a built-in DIODE, 0.0024 ohm RDS(on), and operates in ENHANCEMENT MODE.
IRFS4010TRLPBF
IRFS4010TRLPBF by Infineon is a N-CHANNEL Power FET with 100V DS Breakdown Voltage and 180A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 375W.
FDC658AP-G
Power Field-Effect Transistors; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Moisture Sensitivity Level (MSL): 1; Terminal Finish: MATTE TIN; Peak Reflow Temperature (C): 260;
FQD3P50TM
FQD3P50TM by Onsemi is a P-CHANNEL Power FET with 500V DS Breakdown Voltage, ideal for SWITCHING applications. It features 8.4A Max Pulsed Drain Current, 250mJ Avalanche Energy Rating, and 4.9 ohm Max Drain-Source Resistance. This ENHANCEMENT MODE transistor operates at up to 150°C and has a compact SMALL OUTLINE package style for efficient power dissipation.
IRFR4620TRLPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 144 W; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: Matte Tin (Sn) - with Nickel (Ni) barrier;
NVMFD5C650NLWFT1G
NVMFD5C650NLWFT1G by Onsemi is a Power FET with 60V DS Breakdown Voltage, 502A IDM, and 0.0058 ohm RDS(on). Ideal for automotive applications due to AEC-Q101 standard compliance. Enhances performance in power management systems with its high current handling capabilities.
FDS8984-F085
FDS8984-F085 by Onsemi is a N-CHANNEL Power FET with 30V DS Breakdown Voltage, suitable for SWITCHING applications. It features 2 ELEMENTS WITH BUILT-IN DIODE in a RECTANGULAR package with GULL WING terminals. With a Max Pulsed Drain Current of 30A and 0.023 ohm Drain-Source On Resistance, it operates in ENHANCEMENT MODE at up to 150°C.
2N7002PS,115
NXP Semiconductors
2N7002PS,115 by NXP Semiconductors is an N-CHANNEL Power FET with 0.32A Max Drain Current and 0.99W Power Dissipation. It operates in ENHANCEMENT MODE and can withstand temperatures from -55 to 150 °C. Ideal for applications requiring high power efficiency in compact designs.
SCT2080KEC
ROHM
ROHM's SCT2080KEC is a N-CHANNEL Power FET with 1200V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a max Drain Current of 40A and On Resistance of 0.117 ohm. Operating in ENHANCEMENT MODE, it can handle up to 80A Pulsed Drain Current and dissipate 262W power at max.
JANTX2N6796
Unitrode
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation Ambient: 25 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Pulsed Drain Current (IDM): 32 A;
IRF640
Motorola
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 125 W; Terminal Position: SINGLE; No. of Terminals: 3;
DMG2305UX-13
Diodes Incorporated
DMG2305UX-13 by Diodes Inc. is a P-channel FET with 20V DS breakdown voltage and 4.2A max drain current, ideal for switching applications. It features a single configuration with built-in diode, operates in enhancement mode, and has a max power dissipation of 1.4W. This MOSFET is surface mountable, with Gull Wing terminals and can withstand temperatures up to 150°C.
AUIRF5210STRL
AUIRF5210STRL by Infineon is a P-CHANNEL FET with 100V DS breakdown voltage, ideal for switching applications. It features a single configuration with built-in diode, capable of handling 140A pulsed drain current and dissipating up to 170W power. This MOSFET operates in enhancement mode at temperatures up to 150°C, making it suitable for automotive and industrial use.
SIRA01DP-T1-GE3
Vishay Intertechnology's SIRA01DP-T1-GE3 is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. Features include 150A IDM, 31.2mJ EAS, and 0.0049 ohm RDS(ON). Operating from -55 to 150 °C, it has a fast ton of 42ns and toff of 98ns in a small outline package.
SIR422DP-T1-GE3
Vishay Intertechnology's SIR422DP-T1-GE3 is an N-channel power FET with a built-in diode, ideal for switching applications. It features a min DS breakdown voltage of 40V, max pulsed drain current of 70A, and max operating temperature of 150°C. This MOSFET has a package style of small outline and offers low drain-source on resistance at 0.0066 ohm.
IRF7759L2TRPBF
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 125 W; Package Shape: RECTANGULAR; No. of Elements: 1;
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PMEG050T150EIPD
Nexperia
NCR320U
LED DISPLAY DRIVER; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;
PMEG120G20ELR
PESD2ETH1G-T
PESD2ETH1G-T by Nexperia is a transient suppression device with common cathode configuration, 2 elements, and bidirectional polarity. It operates b/w -55 to 150 °C and has a max reverse voltage of 24 V. Ideal for protecting electronic circuits from voltage spikes in automotive and industrial applications.
BCP53H
Small Signal Bipolar Transistors; Terminal Finish: Tin (Sn); Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3;
LSF0102DC
Level Translators; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag); JESD-609 Code: e4;
NXB0104BQ
BUS TRANSCEIVER; JESD-609 Code: e4; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au);
PSMNR70-30YLH
Power Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin (Sn); Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Peak Reflow Temperature (C): 260;
BUK7V4R2-40H
Power Field-Effect Transistors; Terminal Finish: Tin (Sn); JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
MJD44H11A
The Nexperia MJD44H11A is a NPN BJT transistor with VCEsat of 1V, hFE of 40, and IC of 8A. Ideal for switching applications, it has a max operating temp of 150°C and collector-emitter voltage of 80V. With a package style of small outline and surface mount capability, it offers high performance in power electronics.
74AUP1G17GX4
BUFFER; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au); Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30;
PUSB3BB2DF
MJD32C
Power Bipolar Transistors; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: Tin (Sn); Peak Reflow Temperature (C): 260;
PMH260UNE
Small Signal Field-Effect Transistors; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e4; Terminal Finish: Nickel/Palladium/Gold (Ni/Pd/Au);
BUK7S0R7-40H
Power Field-Effect Transistors; Terminal Finish: Tin (Sn); Peak Reflow Temperature (C): 260; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;
BCP56H
Small Signal Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260; JESD-609 Code: e3; Terminal Finish: Tin (Sn);
NCR421PAS
LED DISPLAY DRIVER; Temperature Grade: OTHER; Terminal Form: NO LEAD; No. of Terminals: 6; Package Code: HVSON; Package Shape: RECTANGULAR;
PNS40010ER
PESD3V3T1BL
MJD31CA
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 3 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 3 A;
GAN039-650NBB
GAN039-650NBBA
GAN039-650NTB
GAN041-650WSB
Power Field-Effect Transistors; Terminal Finish: TIN; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 245; Moisture Sensitivity Level (MSL): 1;
GAN063-650WSA
Power Field-Effect Transistors; Terminal Finish: TIN; JESD-609 Code: e3;
GAN080-650EBE
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