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MJH11018

New Jersey Semiconductor Products

MJH11018 by New Jersey Semiconductor Products

NPN; Configuration: SINGLE; Maximum Collector Current (IC): 15 A; Transistor Element Material: SILICON; Minimum DC Current Gain (hFE): 100; Maximum Collector-Emitter Voltage: 150 V;

Median Price

$7.950

Lifecycle Status

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Vyrian

USA . 2,159 parts In-Stock

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Digiode

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Fibra_Brandt Electronic GMBH

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GES GmbH

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Kepictronics

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TANS Electronics

Latvia . 6,512 parts In-Stock

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Problanco Electronics

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SupplyDigital Components

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Corphita

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Kulean Microsystems

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UHIMA Technologies

Türkiye . 554 parts In-Stock

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Corohmni

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Assy Fe

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Technical Specifications

Power Bipolar Junction Transistors (BJT) MJH11018 attributes and parameters. Explore more Power Bipolar Junction Transistors (BJT) devices from New Jersey Semiconductor Products

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

150 V

Configuration:

Minimum DC Current Gain (hFE):

100

No. of Elements:

1

Polarity or Channel Type:

NPN

Transistor Element Material:

SILICON

Trade Compliance

MJH11018 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

New Jersey Semiconductor Products

New Jersey Semiconductor has been designing, manufacturing, and producing highly reliable electronic devices since 1957. Our mission is to supply you with high quality, cost effective discrete devices for commercial, industrial, and military applications. New Jersey Semiconductor's quality management system has been verified to conform with ISO 9001:2015 standards.

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