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2N1717

New England Semiconductor

2N1717 by New England Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 16 MHz; Maximum Power Dissipation (Abs): .8 W; Maximum Collector Current (IC): .75 A;

Median Price

$8.560

Lifecycle Status

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9

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American Microsemiconductor Inc.

USA . 184 parts In-Stock

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Vyrian

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PUI

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Electronic Expediters

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ACDS - Activité Composants Distribution Service

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Manoshevitz Elec. Sales

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ECAB

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Parana Technologies

USA . 2,030 parts In-Stock

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$0.481

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$1.618

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DigiPath Technology Company

USA . 731 parts In-Stock

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$0.529

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$0.487

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ChromeModa Solutions

Germany . 2,641 parts In-Stock

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IDEA Electronic Components Group

UK . 1,964 parts In-Stock

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AZTECH Wire

Italy . 434 parts In-Stock

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One Stop Electronics

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QUARKTWIN TECHNOLOGY LTD

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Microchip USA

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Marpe Global Electronics

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CPlus Electronics

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Corphita

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XL Components Corporation

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QualityLine Systems

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Northwest PG Solutions

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Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2N1717 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from New England Semiconductor

Specs

Maximum Collector Current (IC):

Configuration:

Minimum DC Current Gain (hFE):

40

JEDEC-95 Code:

TO-39

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.8 W

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

2N1717 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

NSN

5961-00-824-7848, 5961008247848, 5961-00-868-5982, 5961008685982, 5961-00-103-7412, 5961001037412, 5961-01-066-0422, 5961010660422, 5961-14-257-3963, 5961142573963

NIIN

008247848, 008685982, 001037412, 010660422, 142573963

PCN

Manufacturer Highlights

New England Semiconductor

New England Semiconductor was founded in 1985 as a manufacturer of aerospace grade high-reliability bipolar transistors. New England Semiconductor was acquired by Microsemi in 2001. Microsemi Corporation is a semiconductor manufacturer specializing in system-engineered integrated circuits and high reliability discrete devices. A long-time supplier of high-reliability discrete components to military and aerospace customers, Microsemi today is a global supplier of high performance analog, mixed-signal integrated circuits and high reliability discrete semiconductors that manage and regulate power, protect against transient voltage spikes, and transmit, receive and amplify electronic signals.

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