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UPA2211T1M-T2-AT

Nec Electronics

UPA2211T1M-T2-AT by Nec Electronics

P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: FLAT; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) UPA2211T1M-T2-AT attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nec Electronics

Specs

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (ID):

7.5 A

Maximum Drain-Source On Resistance:

.025 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

30 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

UPA2211T1M-T2-AT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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