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NP80N03CDE-S12-AZ

Nec Electronics

NP80N03CDE-S12-AZ by Nec Electronics

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Qualification: Not Qualified; Maximum Pulsed Drain Current (IDM): 320 A; Operating Mode: ENHANCEMENT MODE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) NP80N03CDE-S12-AZ attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nec Electronics

Specs

Avalanche Energy Rating (EAS):

400 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

80 A

Maximum Drain-Source On Resistance:

.011 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-220AB

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

320 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NP80N03CDE-S12-AZ Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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