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3SK254-U1E-A

Nec Electronics

3SK254-U1E-A by Nec Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Operating Mode: DUAL GATE, DEPLETION MODE; Additional Features: LOW NOISE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Northwest PG Solutions

USA . 1,279 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.948

10k+ parts

-

1,279

-

-

$3.948

-

Native Components

USA . 965 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$3.908

10k+ parts

-

965

-

-

$3.908

-

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 3SK254-U1E-A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Nec Electronics

Specs

Additional Features:

LOW NOISE

Configuration:

Maximum Drain Current (ID):

.025 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.03 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

JESD-609 Code:

e6

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Minimum Power Gain (Gp):

16 dB

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN BISMUTH

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

3SK254-U1E-A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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