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UPA2201T1M-T1-AT

Nec Electronics America

UPA2201T1M-T1-AT by Nec Electronics America

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-30 Code: R-PDSO-F8; Qualification: Not Qualified; Operating Mode: ENHANCEMENT MODE;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Power Field Effect Transistors (FET) UPA2201T1M-T1-AT attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nec Electronics America

Specs

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

9 A

Maximum Drain-Source On Resistance:

.0185 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PDSO-F8

No. of Elements:

1

No. of Terminals:

8

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

36 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

FLAT

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

UPA2201T1M-T1-AT Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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