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NP180N04TUG-E2-AY

Nec Electronics America

NP180N04TUG-E2-AY by Nec Electronics America

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; JESD-609 Code: e3; Transistor Application: SWITCHING; Terminal Finish: TIN;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 100 parts In-Stock

1+ parts

$1.833

100+ parts

$1.668

1k+ parts

$1.503

10k+ parts

-

100

$1.833

$1.668

$1.503

-

Technical Specifications

Power Field Effect Transistors (FET) NP180N04TUG-E2-AY attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from Nec Electronics America

Specs

Avalanche Energy Rating (EAS):

518 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

40 V

Maximum Drain Current (ID):

180 A

Maximum Drain-Source On Resistance:

.0015 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSSO-G6

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

6

Operating Mode:

ENHANCEMENT MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

720 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

NP180N04TUG-E2-AY Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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