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GA1L3Z-T2L36

Nec Electronics America

GA1L3Z-T2L36 by Nec Electronics America

NPN; Configuration: SINGLE WITH BUILT-IN RESISTOR; Surface Mount: YES; Maximum Collector Current (IC): .1 A; Package Style (Meter): SMALL OUTLINE; Transistor Element Material: SILICON;

Median Price

-

Lifecycle Status

Suppliers In-Stock

0

In-Stock Inventory

< 1k

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) GA1L3Z-T2L36 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Nec Electronics America

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Minimum DC Current Gain (hFE):

135

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

GA1L3Z-T2L36 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

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