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IRF251

National Semiconductor

IRF251 by National Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 150 W; Maximum Drain Current (Abs) (ID): 30 A; Operating Mode: ENHANCEMENT MODE;

Median Price

$21.480

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

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Bristol Electronics

USA . 4,231 parts In-Stock

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$19.001

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Digiode

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Electronic Expediters

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Pegasus Components GmbH

Germany . 43 parts In-Stock

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Lighthouse Electronics, Inc.

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LittleDiode

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MISTER SPROCKETS

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Supply Digital

USA . 972 parts In-Stock

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Corphita

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Technical Specifications

Power Field Effect Transistors (FET) IRF251 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from National Semiconductor

Specs

Configuration:

Maximum Drain Current (Abs) (ID):

30 A

Maximum Drain Current (ID):

30 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-609 Code:

e0

No. of Elements:

1

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

Tin/Lead (Sn/Pb)

Trade Compliance

IRF251 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-01-273-0764, 5961012730764

NIIN

012730764

Manufacturer Highlights

National Semiconductor

National Semiconductor was an American semiconductor manufacturer which specialized in analog devices and subsystems, formerly with headquarters in Santa Clara, California. The company produced power management integrated circuits, display drivers, audio and operational amplifiers, communication interface products and data conversion solutions. National's key markets included wireless handsets, displays and a variety of broad electronics markets, including medical, automotive, industrial and test and measurement applications.On September 23, 2011, the company formally became part of Texas Instruments as the "Silicon Valley" division.

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