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BC337.25

Multicomp Pro

BC337.25 by Multicomp Pro

BC337.25 by Multicomp Pro is a NPN BJT transistor with max VCEsat of 0.7V, hFE of 160, and IC of 0.8A. Ideal for amplifier applications due to its high transition frequency of 210MHz and max power dissipation of 0.625W. Operates in temp range -65 to 150 °C.

Median Price

$0.086

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Overview

Enhance your electronic projects with the BC337.25 by Multicomp Pro, a high-quality Small Signal Bipolar Junction Transistor (BJT) designed for amplifier applications. Manufactured with precision and expertise, this NPN transistor offers a reliable performance with a maximum VCEsat of 0.7V and a minimum DC current gain of 160. Its durable plastic/epoxy body material ensures longevity, while its compact cylindrical package shape makes it easy to integrate into your circuits. Experience the value and benefits of this versatile component, perfect for amplification tasks in a wide range of electronic devices.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good insulation and protection for the transistor, making it durable and reliable for various applications.

Polarity or Channel Type: NPN

Commonly used type of transistor configuration for amplification applications, ensuring compatibility and ease of integration in circuits.

Configuration: SINGLE

Simplified setup with a single transistor, suitable for basic amplifier circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplification purposes, ensuring optimal performance in amplifier circuits.

Maximum VCEsat: 0.7 V

Low saturation voltage helps in reducing power consumption and improving efficiency of the amplifier circuit.

Package Shape: ROUND

Compact and efficient shape for easy mounting and space-saving design.

Terminal Form: WIRE

Wire terminals provide easy connectivity and secure connections in circuits.

No. of Terminals: 3

Simplified terminal configuration makes it easy to connect in circuits.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides structural integrity and ease of mounting.

Maximum Power Dissipation Ambient: 0.625 W

Efficient power handling capacity for reliable performance in various ambient conditions.

Minimum DC Current Gain (hFE): 160

High DC current gain ensures good amplification capability and stability in the circuit.

Maximum Operating Temperature: 150 °C

Wide operating temperature range for versatility in different environmental conditions.

Maximum Collector-Emitter Voltage: 45 V

High collector-emitter voltage rating for handling different voltage levels in the circuit.

Transistor Element Material: SILICON

Silicon material provides reliable performance and durability in various applications.

Minimum Operating Temperature: -65 °C

Wide temperature range for reliable operation in extreme cold conditions.

Maximum Collector Current (IC): 0.8 A

High collector current rating for handling increased current demands in the circuit.

Terminal Position: BOTTOM

Bottom terminal position for easy mounting and PCB layout arrangement.

Nominal Transition Frequency (fT): 210 MHz

High transition frequency for faster switching speeds and improved performance in high-frequency applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) BC337.25 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Multicomp Pro

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

45 V

Configuration:

Minimum DC Current Gain (hFE):

160

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-W3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

.625 W

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

.7 V

Trade Compliance

BC337.25 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.75

SB

8541.21.00.80

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