Loading...

VN2460N3-G

Microchip Technology

VN2460N3-G by Microchip Technology

VN2460N3-G by Microchip is a N-CHANNEL FET with 600V DS Breakdown Voltage, ideal for SWITCHING applications. It features a Max Power Dissipation of 1W, -55 to 150 °C Operating Temperature range, and 25 ohm Drain-Source On Resistance. Suitable for various ENHANCEMENT MODE operations.

Median Price

$1.500

Lifecycle Status

Suppliers In-Stock

9

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Farnell

UK . 288 parts In-Stock

1+ parts

$1.200

100+ parts

$0.903

1k+ parts

$0.885

10k+ parts

-

288

$1.200

$0.903

$0.885

-

Arrow

USA . 323 parts In-Stock

1+ parts

$1.497

100+ parts

$1.248

1k+ parts

$1.128

10k+ parts

-

323

$1.497

$1.248

$1.128

-

Microchip Technology

USA . 4,950 parts In-Stock

1+ parts

$1.500

100+ parts

$1.130

1k+ parts

$0.950

10k+ parts

$0.880

4,950

$1.500

$1.130

$0.950

$0.880

Mouser Electronics

USA . 811 parts In-Stock

1+ parts

$1.500

100+ parts

$1.130

1k+ parts

-

10k+ parts

-

811

$1.500

$1.130

-

-

DigiKey

USA . 429 parts In-Stock

1+ parts

$1.500

100+ parts

$1.130

1k+ parts

-

10k+ parts

-

429

$1.500

$1.130

-

-

Element14

Singapore . 288 parts In-Stock

1+ parts

$2.150

100+ parts

$1.620

1k+ parts

$1.590

10k+ parts

-

288

$2.150

$1.620

$1.590

-

Verical

USA . 425 parts In-Stock

1+ parts

-

100+ parts

$1.722

1k+ parts

$1.540

10k+ parts

$1.526

425

-

$1.722

$1.540

$1.526

Master Electronics

USA . 425 parts In-Stock

1+ parts

-

100+ parts

$1.230

1k+ parts

$1.100

10k+ parts

-

425

-

$1.230

$1.100

-

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TME

Poland . 111 parts In-Stock

1+ parts

$1.000

100+ parts

$0.690

1k+ parts

-

10k+ parts

-

111

$1.000

$0.690

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,886 parts In-Stock

1+ parts

$1.020

100+ parts

-

1k+ parts

-

10k+ parts

-

1,886

$1.020

-

-

-

QUARKTWIN TECHNOLOGY LTD

USA . 20,939 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

20,939

-

-

-

-

Perfect Parts

USA . 4,543 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,543

-

-

-

-

RGB Technical Solutions

Ukraine . 4,294 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,294

-

-

-

-

Authorized Procurement Solutions

USA . 4,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,000

-

-

-

-

iodParts Technologies Inc.

India . 157 parts In-Stock

1+ parts

-

100+ parts

$2.058

1k+ parts

-

10k+ parts

-

157

-

$2.058

-

-

Overview

Unleash the power of the VN2460N3-G by Microchip Technology, a game-changer in the world of Small Signal Field Effect Transistors. Crafted with precision and expertise by Microchip Technology, this N-CHANNEL transistor offers unparalleled quality and reliability. Ideal for switching applications, this transistor is designed to enhance performance and efficiency. With a high DS Breakdown Voltage of 600V and maximum Drain Current of 0.16A, this transistor guarantees top-notch functionality. Say goodbye to compromise and hello to excellence with the VN2460N3-G.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: N-CHANNEL

Offers efficient current flow and high performance for switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Simplifies circuit design and saves space by integrating a diode within the transistor.

Transistor Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Minimum DS Breakdown Voltage: 600 V

Allows for high voltage handling capability, making it suitable for a wide range of applications.

Package Shape: ROUND

Facilitates easy mounting and installation in various electronic devices.

Terminal Form: THROUGH-HOLE

Enables secure and stable connections to the circuit board.

Operating Mode: ENHANCEMENT MODE

Enhances the efficiency of the transistor by requiring a gate voltage to turn on the device.

No. of Terminals: 3

Provides the necessary connections for power, signal, and ground in a compact form factor.

Maximum Power Dissipation (Abs): 1 W

Handles power efficiently without overheating or performance degradation.

Package Style (Meter): CYLINDRICAL

Offers a compact and easy-to-mount package design for various applications.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Delivers high performance and reliability with low power consumption and fast switching speeds.

Maximum Operating Temperature: 150 °C

Ensures reliable performance in high-temperature environments without degradation.

Transistor Element Material: SILICON

Provides reliable and consistent performance with high endurance and stability.

Minimum Operating Temperature: -55 °C

Ensures operational reliability even in extreme low-temperature conditions.

Terminal Finish: MATTE TIN

Facilitates soldering and ensures strong and reliable connections.

Maximum Drain Current (ID): 0.16 A

Handles high current loads efficiently and reliably for various applications.

Maximum Drain-Source On Resistance: 25 ohm

Provides low resistance for efficient power dissipation and high performance.

Terminal Position: BOTTOM

Facilitates easy and secure mounting on the circuit board.

Maximum Feedback Capacitance (Crss): 25 pF

Keeps the feedback capacitance low for stable and reliable performance in high-frequency applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) VN2460N3-G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Microchip Technology

Specs

Additional Features:

LOW THRESHOLD

Minimum DS Breakdown Voltage:

600 V

Maximum Drain Current (ID):

.16 A

Maximum Drain-Source On Resistance:

25 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

25 pF

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Maximum Power Dissipation Ambient:

1 W

Maximum Power Dissipation (Abs):

1 W

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

VN2460N3-G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.