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UM4001B

Microchip Technology

UM4001B by Microchip Technology

UM4001B by Microchip Technology is a PIN diode with a max diode capacitance of 3 pF and a reverse test voltage of 100 V. It is used for attenuator and switching applications in high frequency to S band.

Median Price

$19.220

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Microchip Technology

USA . 793 parts In-Stock

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$19.220

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$17.350

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$15.620

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Verical

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Nova Conductors

Japan . 77 parts In-Stock

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$15.620

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Bristol Electronics

USA . 2 parts In-Stock

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Vyrian

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LWI Electronics Inc

India . 6 parts In-Stock

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Legend Electronics Inc.

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ECAB

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AZTECH Wire

Italy . 463 parts In-Stock

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$9.013

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Ampacity Inc.

Singapore . 54 parts In-Stock

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$14.050

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Continental Prestige Electronics

USA . 1,701 parts In-Stock

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Semicontronic

India . 54 parts In-Stock

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$30.580

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$29.816

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Microchip USA

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Argo Parts USA

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Component Stockers USA

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Overview

Experience the next level of reliability and performance with the UM4001B PIN Diode by Microchip Technology. As a trusted manufacturer in the industry, Microchip Technology guarantees top-notch quality and cutting-edge technology. Whether you need an attenuator or a switching application, the UM4001B offers unparalleled value with its high-frequency capabilities and 100V reverse test voltage. With a maximum diode capacitance of only 3pF and a nominal minority carrier lifetime of 10us, this PIN diode ensures optimal power dissipation and resistance. Choose the UM4001B for your projects and experience the advantage of Microchip Technology's innovation.

Feature Benefit Bullets

Config: SINGLE

Single configuration allows for simple and straightforward implementation in various applications.

Frequency Band: HIGH FREQUENCY TO S BAND

Wide frequency band range ensures compatibility with high frequency applications, making it versatile.

Maximum Diode Capacitance: 3 pF

Low diode capacitance enables high speed operation and low signal distortion.

Package Shape: ROUND

Round package shape allows for efficient and compact integration into circuit designs.

Reverse Test Voltage: 100 V

High reverse test voltage rating provides reliability and protection against voltage spikes.

No. of Terminals: 2

Two terminals simplify connection and installation of the diode in circuits.

Package Style (Meter): LONG FORM

Long form package style offers flexibility in mounting and placement options.

Application: ATTENUATOR; SWITCHING

Suitable for attenuator and switching applications due to its performance and characteristics.

Terminal Finish: TIN LEAD

Tin lead terminal finish enhances solderability and conductivity for reliable connections.

Terminal Position: AXIAL

Axial terminal position enables easy alignment and insertion into circuit boards.

Maximum Diode Forward Resistance: 0.5 ohm

Low forward resistance ensures minimal signal loss and efficient operation.

Case Connection: ISOLATED

Isolated case connection prevents interference and improves circuit performance.

Maximum Power Dissipation: 2.5 W

High power dissipation capability allows for reliable operation under demanding conditions.

Nominal Diode Capacitance: 2.4 pF

Low nominal diode capacitance contributes to improved high frequency performance and signal integrity.

Nominal Minority Carrier Lifetime: 10 us

Long minority carrier lifetime enhances the diode's efficiency and speed in signal processing.

Diode Resistive Test Frequency: 100 MHz

High resistive test frequency ensures accurate and reliable performance in high frequency applications.

Diode Resistive Test Current: 100 mA

Suitable resistive test current rating for testing and measuring the diode's performance accurately.

Diode Type: PIN DIODE

Pin diode technology offers high-speed switching and low signal distortion for various applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Positive-intrinsic-negative technology provides optimized performance for high frequency and switching applications.

Terminal Form: WIRE

Wire terminal form allows for secure and reliable connections in circuits.

Diode Element Material: SILICON

Silicon diode element material ensures stable performance and durability.

Technical Specifications

PIN Diodes UM4001B attributes and parameters. Explore more PIN Diodes devices from Microchip Technology

Specs

Additional Features:

LOW DISTORTION

Application:

ATTENUATOR; SWITCHING

Case Connection:

ISOLATED

Config:

SINGLE

Maximum Diode Capacitance:

3 pF

Nominal Diode Capacitance:

2.4 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.5 ohm

Diode Resistive Test Current:

100 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

HIGH FREQUENCY TO S BAND

JESD-30 Code:

O-XALF-W2

JESD-609 Code:

e0

Nominal Minority Carrier Lifetime:

10 us

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

UNSPECIFIED

Package Shape:

Package Style (Meter):

LONG FORM

Maximum Power Dissipation:

2.5 W

Qualification:

Not Qualified

Reverse Test Voltage:

100 V

Sub-Category:

PIN Diodes

Surface Mount:

NO

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

UM4001B Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

NSN

5961-00-596-2973, 5961005962973, 5961-01-481-4291, 5961014814291, 5961-01-212-0293, 5961012120293

NIIN

005962973, 014814291, 012120293

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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