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JANTX2N3019S

Microchip Technology

JANTX2N3019S by Microchip Technology

JANTX2N3019S by Microchip Tech is a NPN BJT transistor with max. collector-emitter voltage of 80V, max. collector current of 1A, and min. DC current gain of 100 hFE. It's used for switching applications in military standards compliant circuits operating b/w -65°C to 200°C.

Median Price

$5.719

Lifecycle Status

Suppliers In-Stock

48

In-Stock Inventory

1k+

Distributors (Authorized)

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Avnet

USA . 526 parts In-Stock

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$5.528

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$5.247

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TTI

USA . 989 parts In-Stock

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$5.910

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$5.640

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Rochester

USA . 2 parts In-Stock

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$5.990

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$5.870

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$5.750

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$5.990

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Mouser Electronics

USA . 126 parts In-Stock

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$8.680

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$8.060

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Chip1Stop

Japan . 23,147 parts In-Stock

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Arrow

USA . 10,250 parts In-Stock

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Verical

USA . 10,250 parts In-Stock

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Master Electronics

USA . 326 parts In-Stock

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$7.900

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Ace Electronics

USA . 34 parts In-Stock

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Digiode

USA . 1,607 parts In-Stock

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Freelance Electronics

USA . 2,699 parts In-Stock

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$7.896

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$6.514

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$6.580

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Nova Conductors

Japan . 10 parts In-Stock

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TEDSS.com

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Bristol Electronics

USA . 181 parts In-Stock

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$10.412

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$4.511

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$10.412

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American Microsemiconductor Inc.

USA . 25 parts In-Stock

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$15.540

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Chip Stock

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Vyrian

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Semtec, LLC

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Odi Ramu Company

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Mil-Aero Solutions, Inc.

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Elcom Components

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Sunrise Surplus Inc.

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ACDS - Activité Composants Distribution Service

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IBS Electronics

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Classic Components Corporation

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American Connector Supply Corp

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Mentor Electronics Marketing, LLC

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Inland Empire Components Inc.

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Beltway Electronics Company

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MISTER SPROCKETS

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M&R Communications

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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Astute Electronics Inc

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Atlantic Semiconductor

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Manoshevitz Elec. Sales

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Advanced Electronics

New Zealand . 100 parts In-Stock

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$0.390

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$0.371

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$0.371

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$0.390

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$0.371

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Corohmni

South Africa . 183 parts In-Stock

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$1.042

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Aztec Data Supply Inc.

USA . 1,668 parts In-Stock

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$1.635

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Ampacity Inc.

Singapore . 16,212 parts In-Stock

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$3.980

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Semicontronic

India . 15,894 parts In-Stock

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$3.980

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$3.880

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$3.861

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Corphita

USA . 2,801 parts In-Stock

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$5.796

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Continental Prestige Electronics

USA . 2,137 parts In-Stock

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$8.290

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$8.124

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Kepictronics

USA . 22,200 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 20,054 parts In-Stock

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LOOK Integrated Logistics

Peru . 7,875 parts In-Stock

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Problanco Electronics

Mexico . 7,069 parts In-Stock

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Microchip USA

USA . 5,674 parts In-Stock

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LMD Electronica

Estonia . 3,875 parts In-Stock

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Argo Parts USA

USA . 3,702 parts In-Stock

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Montano Global Distributors

Canada . 2,456 parts In-Stock

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TANS Electronics

Latvia . 2,221 parts In-Stock

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Kulean Microsystems

USA . 1,922 parts In-Stock

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SupplyDigital Components

Austria . 1,100 parts In-Stock

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Futuretech Components

Singapore . 758 parts In-Stock

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UHIMA Technologies

Türkiye . 557 parts In-Stock

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Metaverse IC Inc.

Canada . 245 parts In-Stock

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Supply Digital

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NIA Electronics

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France . 59 parts In-Stock

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Perfect Parts

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Overview

Unlock the power of high-quality and reliable performance with the JANTX2N3019S by Microchip Technology. As a leading manufacturer in the industry, Microchip delivers superior Small Signal Bipolar Junction Transistors (BJT) that are ideal for various applications such as switching. With a minimum DC Current Gain (hFE) of 100 and a maximum Collector-Emitter Voltage of 80V, this NPN transistor offers unmatched value and efficiency. Trust Microchip Technology to provide you with the best-in-class components for your projects. Elevate your designs with the JANTX2N3019S today.

Feature Benefit Bullets

Package Body Material: METAL

Provides durability and heat dissipation, making it suitable for high temperature environments.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering reliable performance.

Configuration: SINGLE

Simplifies circuit design and troubleshooting, making it user-friendly for both hobbyists and professionals.

Transistor Application: SWITCHING

Ideal for applications where fast switching speeds are required, such as digital circuits and power supplies.

Package Shape: ROUND

Allows for easy mounting and integration into various electronic systems, enhancing versatility.

Terminal Form: WIRE

Simplifies soldering and connection to a circuit board, facilitating the assembly process.

No. of Elements: 1

One element simplifies circuit design, reducing component count and potential failure points.

No. of Terminals: 3

Three terminals offer flexibility in circuit connections, allowing for various configurations.

Package Style (Meter): CYLINDRICAL

Cylindrical package style enables easy installation and maintenance in compact electronic devices.

Minimum DC Current Gain (hFE): 100

High minimum DC current gain ensures stable and reliable amplification in various applications.

Maximum Operating Temperature: 200 °C

Withstands high temperatures, making it suitable for industrial and automotive applications.

Maximum Collector-Emitter Voltage: 80 V

Offers a high voltage tolerance, making it suitable for applications with higher voltages.

Transistor Element Material: SILICON

Silicon material provides high performance and reliability in various electronic circuits.

Minimum Operating Temperature: -65 °C

Can operate in low temperatures, making it suitable for outdoor and aerospace applications.

Maximum Collector Current (IC): 1 A

Supports high collector current, enabling the transistor to handle demanding loads.

Terminal Finish: TIN LEAD

Tin lead finish provides good solderability and corrosion resistance, ensuring reliable connections.

Terminal Position: BOTTOM

Bottom terminal placement simplifies PCB layout and minimizes footprint, maximizing space efficiency.

Case Connection: COLLECTOR

Collector case connection simplifies the circuit layout and enhances thermal management for improved performance.

Reference Standard: MIL-19500/391H

Complies with military standards, ensuring high quality and reliability for critical applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) JANTX2N3019S attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

80 V

Configuration:

Minimum DC Current Gain (hFE):

100

JEDEC-95 Code:

TO-205AD

JESD-30 Code:

O-MBCY-W3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Qualification:

Qualified

Reference Standard:

MIL-19500/391H

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

JANTX2N3019S Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.21.00.95

SB

8541.21.00.80

NSN

5961-01-187-8067, 5961011878067

NIIN

011878067

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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