Loading...

JANTX2N2222AUBP

Microchip Technology

JANTX2N2222AUBP by Microchip Technology

JANTX2N2222AUBP by Microchip is a NPN BJT transistor with hFE of 30, VCE of 50V, and IC of 0.8A. Ideal for switching applications, it operates b/w -65 to 200°C with ton of 35ns and toff of 300ns. MIL-19500 compliant, this surface-mount device has a ceramic-metal package body.

Median Price

$12.942

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 800 parts In-Stock

1+ parts

$12.942

100+ parts

-

1k+ parts

-

10k+ parts

-

800

$12.942

-

-

-

Vyrian

USA . 896 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

896

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$0.490

100+ parts

$0.466

1k+ parts

$0.466

10k+ parts

-

150

$0.490

$0.466

$0.466

-

Aztec Data Supply Inc.

USA . 2,429 parts In-Stock

1+ parts

$0.735

100+ parts

-

1k+ parts

-

10k+ parts

-

2,429

$0.735

-

-

-

Corohmni

South Africa . 132 parts In-Stock

1+ parts

$1.592

100+ parts

-

1k+ parts

-

10k+ parts

-

132

$1.592

-

-

-

AZTECH Wire

Italy . 271 parts In-Stock

1+ parts

$7.084

100+ parts

-

1k+ parts

-

10k+ parts

-

271

$7.084

-

-

-

Continental Prestige Electronics

USA . 4,130 parts In-Stock

1+ parts

$12.940

100+ parts

-

1k+ parts

-

10k+ parts

$12.681

4,130

$12.940

-

-

$12.681

Netroflash

USA . 2,000 parts In-Stock

1+ parts

$12.942

100+ parts

$12.683

1k+ parts

-

10k+ parts

-

2,000

$12.942

$12.683

-

-

Semicontronic

India . 1,245 parts In-Stock

1+ parts

$51.050

100+ parts

$49.774

1k+ parts

$49.518

10k+ parts

-

1,245

$51.050

$49.774

$49.518

-

Ampacity Inc.

Singapore . 995 parts In-Stock

1+ parts

$58.050

100+ parts

-

1k+ parts

-

10k+ parts

-

995

$58.050

-

-

-

Microchip USA

USA . 10,131 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

10,131

-

-

-

-

QualityLine Systems

Poland . 6,456 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

6,456

-

-

-

-

Marpe Global Electronics

Taiwan . 5,779 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

5,779

-

-

-

-

XL Components Corporation

Australia . 3,371 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,371

-

-

-

-

Argo Parts USA

USA . 1,966 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,966

-

-

-

-

Overview

Experience the superior quality and reliability of the JANTX2N2222AUBP by Microchip Technology, a leading manufacturer in the industry. This small signal bipolar junction transistor (BJT) is perfect for switching applications, offering fast turn-on and turn-off times. With a high DC current gain and a maximum collector-emitter voltage of 50V, this NPN transistor provides exceptional performance and efficiency. Trust in Microchip Technology to deliver cutting-edge technology and innovation for your electronic projects.

Feature Benefit Bullets

Package Body Material: CERAMIC, METAL-SEALED COFIRED

This material provides excellent thermal conductivity and high reliability, making the transistor suitable for high temperature applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used for amplification and switching applications, offering stability and reliability in various circuit designs.

Configuration: SINGLE

The single configuration simplifies circuit design and troubleshooting, making it easy to integrate this transistor into different electronic projects.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speeds and low power consumption, making it ideal for efficient circuit operation.

Surface Mount: YES

Surface mount packaging allows for easy and efficient PCB assembly, saving space and reducing overall production costs.

Minimum DC Current Gain (hFE): 30

A high minimum DC current gain ensures consistent and reliable amplification in various circuit configurations, contributing to stable performance.

Maximum Operating Temperature: 200 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without compromising performance, ensuring reliability in harsh environments.

Maximum Collector-Emitter Voltage: 50 V

The high maximum collector-emitter voltage rating allows for versatility in circuit design, accommodating a wide range of voltage requirements for different applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance and reliability, making them a trusted choice for a wide range of electronic applications.

Maximum Turn On Time (ton): 35 ns

Fast turn-on time ensures quick response in switching operations, enhancing the efficiency and speed of the overall circuit performance.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows for operation in cold environments without compromising performance, making this transistor suitable for a wide range of applications.

Maximum Collector Current (IC): 0.8 A

With a high maximum collector current rating, this transistor can handle larger current loads, making it suitable for high-power applications.

Maximum Turn Off Time (toff): 300 ns

Fast turn-off time ensures efficient switching transitions, reducing power loss and improving the overall performance of the circuit.

Terminal Position: DUAL

Dual terminal position allows for easy and secure connections, enhancing the reliability and stability of the transistor within the circuit.

Reference Standard: MIL-19500

Compliance with MIL-19500 standard ensures high quality and reliability, making this transistor a trusted choice for military and aerospace applications.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) JANTX2N2222AUBP attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Microchip Technology

Specs

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

50 V

Configuration:

Minimum DC Current Gain (hFE):

30

JESD-30 Code:

R-CDSO-N3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

200 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

CERAMIC, METAL-SEALED COFIRED

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Reference Standard:

MIL-19500

Surface Mount:

YES

Terminal Form:

NO LEAD

Terminal Position:

DUAL

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Maximum Turn Off Time (toff):

300 ns

Maximum Turn On Time (ton):

35 ns

Trade Compliance

JANTX2N2222AUBP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.95

SB

8541.29.00.80

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20