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25AA512T-I/SM

Microchip Technology

25AA512T-I/SM by Microchip Technology

25AA512T-I/SM by Microchip Tech is a 64KX8 EEPROM with SPI serial bus, 524288 bit memory density, and 1000000 write/erase cycles. Operating at -40 to 85 °C, it's ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

Median Price

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Lifecycle Status

Suppliers In-Stock

4

In-Stock Inventory

1k+

Distributors (In-Stock)

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VNN

France . 5,575 parts In-Stock

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Vyrian

USA . 4,459 parts In-Stock

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Chip Stock

USA . 3,700 parts In-Stock

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3,700

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Nova Conductors

Japan . 15 parts In-Stock

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Advanced Electronics

New Zealand . 82 parts In-Stock

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$3.123

100+ parts

$2.842

1k+ parts

$2.561

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82

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$2.561

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Corohmni

South Africa . 203 parts In-Stock

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$4.310

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AZTECH Wire

Italy . 290 parts In-Stock

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$12.630

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Ampacity Inc.

Singapore . 762 parts In-Stock

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$29.000

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S.R.D Solutions

India . 5,760 parts In-Stock

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Montano Global Distributors

Canada . 5,604 parts In-Stock

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LOOK Integrated Logistics

Peru . 5,294 parts In-Stock

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Ledger Components

France . 5,107 parts In-Stock

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LMD Electronica

Estonia . 4,513 parts In-Stock

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Continental Prestige Electronics

USA . 3,894 parts In-Stock

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NIA Electronics

USA . 3,751 parts In-Stock

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Argo Parts USA

USA . 2,243 parts In-Stock

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Netroflash

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Authorized Procurement Solutions

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Overview

Unlock the power of reliable data storage with the 25AA512T-I/SM EEPROM by Microchip Technology. Designed with precision and quality in mind, this versatile memory IC offers endless possibilities for your industrial applications. With a high endurance of 1,000,000 write/erase cycles and a wide operating temperature range, this EEPROM ensures your data stays secure and accessible when you need it most. Trust in Microchip Technology to deliver the best-in-class products for your needs. Discover the value and advantages this EEPROM brings to your projects today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the EEPROM, ensuring a longer lifespan.

Surface Mount: YES

Allows for easy and convenient installation on printed circuit boards.

Operating Mode: SYNCHRONOUS

Allows for faster and more efficient data transfer within the EEPROM.

Nominal Supply Voltage / Vsup (V): 5

Standard voltage requirement that is easily available in most electronic systems.

Maximum Operating Temperature: 85 °C

Can withstand high temperatures, ideal for industrial applications.

Endurance: 1000000 Write/Erase Cycles

High endurance ensures reliability and longevity of the EEPROM.

Technical Specifications

EEPROM 25AA512T-I/SM attributes and parameters. Explore more EEPROM devices from Microchip Technology

Specs

Additional Features:

2.5V TO 5.5V @ 0.1MHz

Maximum Clock Frequency (fCLK):

20 MHz

Minimum Data Retention Time:

200

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e3

Length:

5.26 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Ports:

1

No. of Terminals:

8

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

85 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

SOP

Package Equivalence Code:

SOP8,.3

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

260

Power Supplies (V):

2.5/5

Programming Voltage (V):

5

Qualification:

Not Qualified

Screening Level:

AEC-Q100

Maximum Seated Height:

2.03 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000001 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

10 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

4.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Matte Tin (Sn) - annealed

Terminal Form:

GULL WING

Terminal Pitch:

1.27 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

40

Width:

5.25 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

25AA512T-I/SM Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Microchip Technology

Microchip Technology Incorporated is a leading provider of integrated circuit (IC) solutions for the global market. Founded in 1989, the company designs, manufactures, tests and markets state-of-the-art microcontrollers and analog devices for use in a wide array of electronics applications, such as the automotive industry, consumer electronics and industrial automation. Through its world-class production processes and technologies, Microchip Technology has become an innovator of semiconductor solutions that enable customers to maximize their performance while streamlining costs.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President and CEO

Ganesh Moorthy

Executive Chair

Steve Sanghi

CFO, Senior VP

J. Eric Bjornholt

Manufacturer fab locations 9

Fab name Location Fab Initiation Wafer Capacity

Fab 5 - Colorado

Fabrication

Fab Initiation

1995

USA

Colorado Springs

Wafer Capacity

70,000

1995

70,000

Santa Clara

Fabrication

Fab Initiation

1990

USA

Santa Clara

Wafer Capacity

1,290

1990

1,290

Lawrence

Fabrication

Fab Initiation

1989

USA

Lawrence

Wafer Capacity

5,000

1989

5,000

Fab 4 - Gresham

Fabrication

Fab Initiation

1988

USA

Gresham

Wafer Capacity

50,000

1988

50,000

Fab 2 - Tempe

Fabrication

Fab Initiation

1994

USA

Tempe

Wafer Capacity

30,000

1994

30,000

Beverly

Fabrication

Fab Initiation

1985

USA

Beverly

Wafer Capacity

2,000

1985

2,000

Lowell

Fabrication

Fab Initiation

1986

USA

Lowell

Wafer Capacity

15,000

1986

15,000

Garden Grove

Fabrication

Fab Initiation

1985

USA

Garden Grove

Wafer Capacity

12,000

1985

12,000

New Fab - Gresham

Fabrication

Fab Initiation

2024

USA

Gresham

Wafer Capacity

2024

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