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IXTY02N50D

IXYS Corporation

IXTY02N50D by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Pulsed Drain Current (IDM): .8 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PSSO-G2;

Median Price

$3.050

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 3,666 parts In-Stock

1+ parts

$3.050

100+ parts

$1.270

1k+ parts

$1.140

10k+ parts

$1.070

3,666

$3.050

$1.270

$1.140

$1.070

DigiKey

USA . 158 parts In-Stock

1+ parts

$3.050

100+ parts

$1.443

1k+ parts

$1.094

10k+ parts

$0.938

158

$3.050

$1.443

$1.094

$0.938

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 700 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

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700

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 2,477 parts In-Stock

1+ parts

$2.030

100+ parts

-

1k+ parts

-

10k+ parts

-

2,477

$2.030

-

-

-

Microchip USA

USA . 3,666 parts In-Stock

1+ parts

$16.185

100+ parts

-

1k+ parts

-

10k+ parts

-

3,666

$16.185

-

-

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Authorized Procurement Solutions

USA . 3,000 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

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10k+ parts

-

3,000

-

-

-

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Aranea Global

USA . 1,000 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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10k+ parts

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1,000

-

-

-

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Perfect Parts

USA . 978 parts In-Stock

1+ parts

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100+ parts

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978

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Technical Specifications

Power Field Effect Transistors (FET) IXTY02N50D attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (ID):

.2 A

Maximum Drain-Source On Resistance:

30 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-252AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

.8 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTY02N50D Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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