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IXTT26N50P

IXYS Corporation

IXTT26N50P by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; Operating Mode: ENHANCEMENT MODE; Avalanche Energy Rating (EAS): 1000 mJ;

Median Price

$5.014

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

< 1k

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Chip1Stop

Japan . 10 parts In-Stock

1+ parts

$4.339

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10

$4.339

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Arrow

USA . 10 parts In-Stock

1+ parts

$5.688

100+ parts

$4.554

1k+ parts

$4.111

10k+ parts

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10

$5.688

$4.554

$4.111

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Verical

USA . 10 parts In-Stock

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10

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Component Stockers USA

USA . 57 parts In-Stock

1+ parts

$1.610

100+ parts

$3.050

1k+ parts

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57

$1.610

$3.050

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Andel Nordic

Denmark . 29 parts In-Stock

1+ parts

$8.005

100+ parts

-

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$7.685

10k+ parts

$7.685

29

$8.005

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$7.685

$7.685

QUARKTWIN TECHNOLOGY LTD

USA . 29,918 parts In-Stock

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29,918

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Microchip USA

USA . 4,520 parts In-Stock

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4,520

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Authorized Procurement Solutions

USA . 2,500 parts In-Stock

1+ parts

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2,500

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Glotronic Ltd.

UK . 1,965 parts In-Stock

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1,965

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Perfect Parts

USA . 7 parts In-Stock

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Technical Specifications

Power Field Effect Transistors (FET) IXTT26N50P attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

1000 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

500 V

Maximum Drain Current (ID):

26 A

Maximum Drain-Source On Resistance:

.23 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-268AA

JESD-30 Code:

R-PSSO-G2

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

78 A

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTT26N50P Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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