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IXTQ130N10T

IXYS Corporation

IXTQ130N10T by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Power Dissipation (Abs): 360 W; Terminal Form: THROUGH-HOLE; Qualification: Not Qualified;

Median Price

$6.140

Lifecycle Status

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5

In-Stock Inventory

1k+

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Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Mouser Electronics

USA . 224 parts In-Stock

1+ parts

$5.950

100+ parts

-

1k+ parts

$2.560

10k+ parts

$2.510

224

$5.950

-

$2.560

$2.510

DigiKey

USA . 296 parts In-Stock

1+ parts

$6.330

100+ parts

$3.607

1k+ parts

$2.568

10k+ parts

$2.513

296

$6.330

$3.607

$2.568

$2.513

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Ozdisan Elektronik

Türkiye . 402 parts In-Stock

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$4.756

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402

$4.756

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NAC Semi

USA . 289 parts In-Stock

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$11.900

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$10.820

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289

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$11.900

$10.820

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Nova Conductors

Japan . 10 parts In-Stock

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10

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Ampacity Inc.

Singapore . 24 parts In-Stock

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$9.950

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24

$9.950

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Microchip USA

USA . 6,964 parts In-Stock

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$15.652

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6,964

$15.652

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Metaverse IC Inc.

Canada . 50,000 parts In-Stock

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iodParts Technologies Inc.

India . 32,365 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 12,877 parts In-Stock

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Perfect Parts

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1,574

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Aranea Global

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500

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GreenTree Electronics

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436

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Technical Specifications

Power Field Effect Transistors (FET) IXTQ130N10T attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED, ULTRA-LOW RESISTANCE

Avalanche Energy Rating (EAS):

500 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

100 V

Maximum Drain Current (Abs) (ID):

130 A

Maximum Drain Current (ID):

130 A

Maximum Drain-Source On Resistance:

.0091 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Maximum Pulsed Drain Current (IDM):

300 A

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTQ130N10T Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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