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IXTH6N120

IXYS Corporation

IXTH6N120 by IXYS Corporation

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Terminal Finish: MATTE TIN; Terminal Form: THROUGH-HOLE;

Median Price

$10.070

Lifecycle Status

Suppliers In-Stock

7

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Future Electronics

Canada . 465 parts In-Stock

1+ parts

$8.580

100+ parts

$8.290

1k+ parts

$8.170

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465

$8.580

$8.290

$8.170

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Newark

USA . 285 parts In-Stock

1+ parts

$9.240

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$9.240

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$9.240

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285

$9.240

$9.240

$9.240

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Mouser Electronics

USA . 194 parts In-Stock

1+ parts

$10.070

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-

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$8.580

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194

$10.070

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$8.580

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DigiKey

USA . 260 parts In-Stock

1+ parts

$10.270

100+ parts

$8.887

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$7.500

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260

$10.270

$8.887

$7.500

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Verical

USA . 300 parts In-Stock

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$11.329

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$10.977

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300

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$11.329

$10.977

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Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ozdisan Elektronik

Türkiye . 300 parts In-Stock

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$13.811

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300

$13.811

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NAC Semi

USA . 294 parts In-Stock

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$24.110

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$22.260

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294

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$24.110

$22.260

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

CoreStaff

Japan . 300 parts In-Stock

1+ parts

$14.123

100+ parts

$8.303

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300

$14.123

$8.303

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Microchip USA

USA . 8,127 parts In-Stock

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$37.044

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8,127

$37.044

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iodParts Technologies Inc.

India . 4,315 parts In-Stock

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4,315

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Benley Electronics

USA . 232 parts In-Stock

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GreenTree Electronics

Israel . 50 parts In-Stock

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50

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Perfect Parts

USA . 24 parts In-Stock

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24

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Technical Specifications

Power Field Effect Transistors (FET) IXTH6N120 attributes and parameters. Explore more Power Field Effect Transistors (FET) devices from IXYS Corporation

Specs

Additional Features:

AVALANCHE RATED

Avalanche Energy Rating (EAS):

500 mJ

Case Connection:

DRAIN

Minimum DS Breakdown Voltage:

1200 V

Maximum Drain Current (ID):

6 A

Maximum Drain-Source On Resistance:

2.6 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

JEDEC-95 Code:

TO-247AD

JESD-30 Code:

R-PSFM-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

FLANGE MOUNT

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Pulsed Drain Current (IDM):

24 A

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

MATTE TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

IXTH6N120 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

IXYS Corporation

IXYS is now part of Littlefuse. Together, IXYS and Littelfuse will leverage their combined technology portfolios and expertise to enhance customer value.Headquartered in Milpitas, CA, and Leiden, Netherlands, IXYS has gained a worldwide reputation as a premier power semiconductor manufacturer. Its diversified product base of specialized power semiconductors, integrated circuits and RF power is utilized by more than 2500 customers worldwide, ranging across industrial, transportation, telecommunications, computer, medical, consumer and clean tech markets. Learn more about IXYS’ 30-year history, its founder Dr. Nathan Zommer, its divisions and current growth.

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